2013年7月15日
Current density enhancement nano-contact phase-change memory for low writing current
Applied Physics Letters
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- 巻
- 103
- 号
- 3
- 開始ページ
- 033116 1-5
- 終了ページ
- 記述言語
- 英語
- 掲載種別
- DOI
- 10.1063/1.4816080
In this work, a phase-change memory (PCM) with self-assembled nanostructures and an oxidized thin phase-change layer is proposed and intensively investigated for low writing reset current by finite element analysis. Current density is significantly enhanced in our nano-contact memory because of the existence of nanostructures and oxidized phase-change layer. The writing current of our proposed memory is about 1/10-3/10 that of conventional cell, which is in good agreement with our experimental results. The heat efficiency in the nano-contact PCM cell is greatly improved and its power consumption can be as low as about 1/10 that of the conventional cell. © 2013 AIP Publishing LLC.
- リンク情報
- ID情報
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- DOI : 10.1063/1.4816080
- ISSN : 0003-6951
- SCOPUS ID : 84881483943