2013年
Vapor-Liquid-Solid Growth of Silicon-Based Nanowires for High Sensitive Sensor
ADVANCED MICRO-DEVICE ENGINEERING III
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- 巻
- 534
- 号
- 開始ページ
- 257
- 終了ページ
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- 記述言語
- 英語
- 掲載種別
- DOI
- 10.4028/www.scientific.net/KEM.534.257
- 出版者・発行元
- TRANS TECH PUBLICATIONS LTD
Silicon-based nanowires (Si-NWs) were fabricated by vapor liquid solid (VLS) growth, and Si-NW device was prototyped using focused ion beam (FIB) processing. The needle shaped thin Si-NWs were formed at a substrate temperature between 1120 and 1313 C. The average and minimum diameters of the NWs were confirmed 60 nm and 44 nm, respectively. As the double-layered structure was observed in the NWs by transmission electron microscope images, it is possible that those are silicon-based NWs with Si core and SiO2 shell structure. From current-voltage characteristics, the Si-NW device has a semiconducting property, and the estimated resistivity of the Si-NW is about 3.1 x 10(4) Omega center dot cm.
- リンク情報
- ID情報
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- DOI : 10.4028/www.scientific.net/KEM.534.257
- ISSN : 1013-9826
- Web of Science ID : WOS:000316642000043