Madan Niraula - My portal

Profile Information

Affiliation: Professor, Graduate School of Engineering Omohi College, Nagoya Institute of Technology

Degree: 工学博士(静岡大学)
Doctor of Engineering(Shizuoka University)

Researcher number: 20345945
J-GLOBAL ID: 200901004890557930
researchmap Member ID: 5000038145

External link: http://smd-lab.web.nitech.ac.jp/

Research Interests

Research Areas

Research History

Apr, 2018 - Present

Professor, Graduate School of Engineering Omohi College, Nagoya Institute of Technology
Apr, 2002 - Mar, 2018

Associate Professor, Nagoya Institute of Technology
Aug, 2010 - Sep, 2010

Researcher, Department of Nonproliferation and National Security, Brookhaven National Laboratory, USA
Apr, 2000 - Mar, 2002

Special researcher of the Japan Society for the Promotion of Science, The Japan Society of Promotion of Science (JSPS) Post-doctoral fellow at Shizuoka University

Committee Memberships

Dec, 2016 - Present

2017 Room Temperature Semiconductor Detectors Advisory Committee
Dec, 2016 - Present

国際会議実行委員
Sep, 2015 - Present

Program committee
Sep, 2015 - Present

国際会議実行委員
Apr, 2008 - Present

審査員
Feb, 2016 - Jan, 2018

応用物理学会代議員

Awards

Nov, 2012

The Electrical Science and Engineering Promotion Awards

Niraula Madan, Yasuda Kazuhito
Apr, 2004

2004 年東海学術奨励会賞, CdTe 厚膜を用いた医療用高性能大面積放射線画像検出器の開発, 財団法人東海学術奨励会

ニラウラマダン
Apr, 2002

The Spring Meeting of The Japan Society of Applied Physics

Papers

Analysis of dislocations and their correlation with dark currents in CdTe/Si heterojunction diode-type x-ray detectors

B. S. Chaudhari, H. Goto, M. Niraula, K. Yasuda

J. Appl. Phys., 130 055302 -(1 )-055302 -(5), Aug, 2021 Peer-reviewed
Properties of iodine-doped CdTe layers on (211) Si grown at high substrate temperatures by MOVPE

M. Niraula, K. Yasuda, R. Torii, Y. Higashira, R. Tamura, B. S. Chaudhari, T. Kobayashi, H. Goto, S. Fujii, Y. Agata

Journal of Electronic Materials, 49(11) 6996-6999, Nov, 2020 Peer-reviewed
Synchrotron characterization of high-Z, current-mode x-ray detectors

Quinn Looker, Michael G. Wood, Antonino Miceli, Madan Niraula, Kazuhito Yasuda, John L. Porter

Review of Scientific Instruments, 91(2) 023509-1-023509-8, Feb, 2020 Peer-reviewed
Metalorganic Vapor Phase Epitaxy of Thick and Uniform Single Crystal CdTe Epitaxial Layers on (211) Si Substrates for X-ray Imaging Detector Development

M. Niraula, K. Yasuda, R. Torii, R. Tamura, Y. Higashira, Y. Agata

Journal of Electronic Materials, 48(12) 7680-7685, Dec, 2019 Peer-reviewed
Characterization of Fine-Pixel X-ray Imaging Detector Array Fabricated by Using Thick Single-Crystal CdTe Layers on Si Substrates Grown by MOVPE

M. Niraula, K. Yasuda, S. Tsubota, T. Yamaguchi, J. Ozawa, T. Mori, Y. Agata

IEEE Trans. Electron Devices, 66(1) 518-523, Jan, 2019 Peer-reviewed
Reform of laboratory courses to develop students possessing knowledge in both electrical and mechanical engineering

2018 JSEE Annual Conference proceeding, -(-) 294-295, Aug 3, 2018
Post Growth Annealing of MOVPE-Grown Single Crystal CdTe Epilayers on (211) Si Substrates

M. Niraula, K. Yasuda, J. Ozawa, T. Yamaguchi, S. Tsubota, T. Mori, Y. Agata

IEEE Transactions on Nuclear Science, 65(8) 2325-2328, Aug, 2018 Peer-reviewed
Development of Large-Area CdTe/n+-Si Epitaxial Layer-Based Heterojunction Diode-Type Gamma-Ray Detector Arrays

M. Niraula, K. Yasuda, M. Kojima, S. Kitagawa, S. Tsubota, T. Yamaguchi, J. Ozawa, Y. Agata

IEEE Transactions on Nuclear Science, 65(4) 1066-1069, Apr 1, 2018 Peer-reviewed
Characterization of (211) and (100) CdTe Layers Grown on Si Substrates by Metalorganic Vapor-Phase Epitaxy

K. Yasuda, M. Niraula, M. Kojima, S. Kitagawa, S. Tsubota, T. Yamaguchi, J. Ozawa, Y. Agata

JOURNAL OF ELECTRONIC MATERIALS, 46(11) 6704-6708, Nov, 2017 Peer-reviewed
Dry Etching Characteristics of MOVPE-Grown CdTe Epilayers in CH4, H-2, Ar ECR Plasmas

K. Yasuda, M. Niraula, N. Araki, M. Miyata, S. Kitagawa, M. Kojima, J. Ozawa, S. Tsubota, T. Yamaguchi, Y. Agata

JOURNAL OF ELECTRONIC MATERIALS, 46(9) 5400-5404, Sep, 2017 Peer-reviewed
Improving the Performances of CdTe Gamma Ray Detectors by H-2/Ar ECR Plasma Processing

M. Niraula, K. Yasuda, S. Kitagawa, M. Kojima, Y. Agata

IEEE ELECTRON DEVICE LETTERS, 37(8) 1059-1062, Aug, 2016 Peer-reviewed
Surface Processing of CdTe Detectors Using Hydrogen Bromide-Based Etching Solution

M. Niraula, K. Yasuda, N. Takai, M. Matsumoto, Y. Suzuki, Y. Tsukamoto, Y. Ito, S. Sugimoto, S. Kouno, D. Yamazaki …

IEEE ELECTRON DEVICE LETTERS, 36(8) 856-858, Aug, 2015 Peer-reviewed
Development of Large-Area Imaging Arrays Using Epitaxially Grown Thick Single Crystal CdTe Layers on Si Substrates

M. Niraula, K. Yasuda, H. Yamashita, Y. Wajima, M. Matsumoto, N. Takai, Y. Tsukamoto, Y. Suzuki, Y. Tsukamoto, Y. Agata

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 61(5) 2555-2558, Oct, 2014 Peer-reviewed
Development of Nuclear Radiation Detectors by Use of Thick Single-Crystal CdTe Layers Grown on (211) p(+)-Si Substrates by MOVPE

K. Yasuda, M. Niraula, Y. Wajima, H. Yamashita, N. Takai, Y. Suzuki, M. Matsumoto, Y. Tsukamoto, Y. Tsukamoto, Y. Agata

JOURNAL OF ELECTRONIC MATERIALS, 43(8) 2860-2863, Aug, 2014 Peer-reviewed
Vapor-phase epitaxial growth of thick single crystal CdTe on Si substrate for X-ray, gamma ray spectroscopic detector development

Madan Niraula, Kazuhito Yasuda, Hayate Yamashita, Yuto Wajima, Yudai Tsukamoto, Masahiko Matsumoto, Yuta Suzuki, Noriaki Takai, Yuki Tsukamoto, Yasunori Agata

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 7-8, 11(7-8) 1333-1336, 2014 Peer-reviewed
Postgrowth Annealing of CdTe Layers Grown on Si Substrates by Metalorganic Vapor-Phase Epitaxy

K. Yasuda, M. Niraula, S. Namba, T. Kondo, S. Muramatsu, H. Yamashita, Y. Wajima, Y. Agata

JOURNAL OF ELECTRONIC MATERIALS, 42(11) 3125-3128, Nov, 2013 Peer-reviewed
Charge transport properties of p-CdTe/n-CdTe/n(+)-Si diode-type nuclear radiation detectors based on metalorganic vapor-phase epitaxy-grown epilayers

M. Niraula, K. Yasuda, Y. Wajima, H. Yamashita, Y. Tsukamoto, Y. Suzuki, M. Matsumoto, N. Takai, Y. Tsukamoto, Y. Agata

JOURNAL OF APPLIED PHYSICS, 114(16) 164510-1-164510-5, Oct, 2013 Peer-reviewed
MOVPE Growth of Thick Single Crystal CdZnTe Epitaxial Layers on Si Substrates for Nuclear Radiation Detector Development

M. Niraula, K. Yasuda, S. Namba, T. Kondo, S. Muramatsu, Y. Wajima, H. Yamashita, Y. Agata

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 60(4) 2859-2863, Aug, 2013 Peer-reviewed
Fabrication and Characterization of X-Ray Spectroscopic Imaging Arrays Based on Thick Single-Crystal CdTe Epitaxial Layers

Madan Niraula, Kazuhito Yasuda, Syuhei Namba, Takaki Kondo, Shinya Muramatsu, Hayate Yamashita, Yuto Wajima, Yasunori Agata

IEEE TRANSACTIONS ON ELECTRON DEVICES, 59(12) 3450-3455, Dec, 2012 Peer-reviewed
Development of Spectroscopic Imaging Arrays Using Epitaxially Grown Thick Single Crystal CdTe Layers on Si Substrates

M. Niraula, K. Yasuda, N. Fujimura, T. Tachi, H. Inuzuka, S. Namba, T. Kondo, S. Muramatsu, Y. Agata

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 59(6) 3201-3204, Dec, 2012 Peer-reviewed

Misc.

放射線エネルギーを識別可能な画像検出器の開発

安田和人, Niraula Madan

光アライアンス, 23(6) 33-36, Jun 1, 2012

Presentations

Low Temperature Annealing of CdTe Detectors with Evaporated Gold Contacts and its effect on Detector Performance

M. Niraula, K. Yasuda, Y. Takagi, S. Fuji

IEEE-2021 The 28th International Symposium on Room-Temperature Semiconductor Detectors (RTSD), Oct 18, 2021, IEEE Nuclear and Plasma Science Society
Growth and characterization of single-crystal lead halide perovskite for X-ray detector application

MM. Islam, M. Niraula, Y. Nakashima, T. Matsubara, S. Hirano, Y. Takagi, K. Yasuda

IEEE-2021 The 28th International Symposium on Room-Temperature Semiconductor Detectors (RTSD), Oct 18, 2021, IEEE Nuclear and Plasma Science Society
Perovskite Single Crystal Growth for for X-ray Detector Application

MM. Islam, Y. Nakashima, T. Matsubara, S. Hirano, Y. Takagi, M. Niraula, K. Yasuda

2021年第82回応用物理学会秋季学術講演会, Sep 10, 2021, 応用物理学会
Evaluation of dislocation densities and their distribution in epitaxial (211)CdTe/Si

Bal Singh Chaudhari, Hayata Goto, Madan Niraula, Kazuhito Yasuda

2021年第68回応用物理学会春季学術講演会, Mar 16, 2021, 応用物理学会
MOVPE法によるn+-(211)Si上のCdTe成長層の成長室内アニール処理検討

松原敏樹, 小林竜大, 後藤颯汰, 藤井成弥, 中島幸寛, 平野颯涼, ニラウラマダン, 安田和人

2021年第68回応用物理学会春季学術講演会, Mar 16, 2021, 応用物理学会
Epitaxial CdTe on Si Heterojunction Diode-Type Detector Performance and Analysis

M. Niraula, K. Yasuda, B. S. Chaudhari, H. Goto, T. Kobayashi, S. Fujii

IEEE-2020 The 27th International Symposium on Room-Temperature Semiconductor Detectors (RTSD), Oct 31, 2020, IEEE Nuclear and Plasma Science Society
In-situ annealing of MOVPE grown CdTe layers on Si substrate

S. Fuji, R. Tamura, R. Torii, Y. Higashira, T. Kobayashi, H. Goto, Y. Agata, M. Niraula, K. Yasuda

The 67th JSAP Spring Meeting 2020, Mar 12, 2020, JSAP
Properties of iodine-doped CdTe layers on (211) Si grown at high substrate temperatures by MOVPE

M. Niraula, K. Yasuda, R. Torii, Y. Higashira, R. Tamura, B. S. Chaudhari, T. Kobayashi, H. Goto, S. Fujii, Y. Agata

The 2019 U.S. Workshop on the Physics and Chemistry of II-VI Materials, Nov 18, 2019, American Physical Society
MOVPE growth of thick n-CdTe layers with high electron density grown on (211)Si substrate [II]

The 66th JSAP Spring Meeting, 2019, Mar 9, 2019, The Japan Society of Applied Physics
MOVPE growth of thick n-CdTe layers with high electron density grown on (211)Si substrate [Ⅰ]

The 66th JSAP Spring Meeting, 2019, Mar 9, 2019, The Japan Society of Applied Physics
Advances in the Crystal Growth and Device Fabrication Techniques of Thick CdTe/Si Epitaxial Layers based Nuclear Radiation Detectors

M. Niraula, K. Yasuda, T. Mori, R. Torii, R. Tamura, Y. Higashira, Y. Agata

IEEE 2018- 25th International Workshop on Room-Temperature Semiconductor X-and Gamma-Ray Detectors,, Nov 10, 2018, IEEE Nuclear and Plasma Science Society Invited
MOVPE Growth and Characterization of Iodine-Doped n-CdTe Layers on (211)Si Substrates Grown at High Substrate Temperatures

M. Niraula, K. Yasuda, T. Mori, B. S. Chaudhari, R. Tamura, Y. Higashira, R. Torii, Y. Agata

IEEE 2018- 25th International Workshop on Room-Temperature Semiconductor X-and Gamma-Ray Detectors, Nov 10, 2018, IEEE Nuclear and Plasma Science Society
Study of MOVPE growth to improve thickness uniformity of CdTe epilayers on Si substrate

The 79th JSAP Autumn Meeting, 2018, Sep 18, 2018, JSAP
Development of X-ray Imaging Sensors Based on Epitaxially Grown Thick CdTe Layers on Si Substrates

M. Niraula, K. Yasuda, S. Tsubota, T. Yamaguchi, J. Ozawa, T. Mori, Y. Agata

2018年第79回応用物理学会学秋季学術講演会, Sep 18, 2018, 公益社団法人応用物理学会
Reform of laboratory courses to develop students possessing knowledge in both electrical and mechanical engineering

2018 JSEE Annual Conference, Aug 29, 2018, JSEE
MOVPE法による(211)CdTe/Si成長層のアニール処理の検討

森拓郎, 小澤潤也, 坪田眞太郎, 山口大貴, 安形保則, ニラウラ・マダン, 安田和人

2018年第65回応用物理学会春季学術講演会, Mar 17, 2018, 応用物理学会
Post Growth Annealing of MOVPE-Grown Single Crystal CdTe Epilayers on (211) Si Substrates

M. Niraula, K. Yasuda, J. Ozawa, T. Yamaguchi, S. Tsubota, T. Mori, Y. Agata

IEEE 2017- 24th International Workshop on Room-Temperature Semiconductor X-and Gamma-Ray Detectors, Oct 21, 2017, IEEE Nuclear and Plasma Science Society
Development of Fine-Pixel X-ray Imaging Arrays using CdTe/n+-Si Epitaxial Layers

M. Niraula, K. Yasuda, S. Tsubota, T. Yamaguchi, J. Ozawa, T. Mori, Y. Agata

IEEE 2017- 24th International Workshop on Room-Temperature Semiconductor X-and Gamma-Ray Detectors, Oct 21, 2017, IEEE Nuclear and Plasma Science Society Invited
Investigation of growth orientation of CdTe crystals grown on (211)Si layers by MOVPE

The 64th JSAP Spring Meeting, Mar 14, 2017, The Japan Society of Applied Physics
Fabrication of large area imaging array using MOVPE grown CdTe layers on (211) Si Substrates

The 64th JSAP Spring Meeting, Mar 14, 2017, The Japan Society of Applied Physics

Research Projects

Development of high-energy resolution nuclear radiation imaging detectors based on cadmium telluride

Apr, 2003 - Present
Performance enhancement of semiconductor nuclear radiation detectors

Apr, 2002 - Present
Development of high efficiency, large area semiconductor nuclear radiation detectors for medical imaging

Apr, 2002 - Present
Si基板上のCdTe成長層を用いたX線画像検出器の性能と信頼性向上に関する研究

科学研究費助成事業, 基盤研究(C), 日本学術振興会, Apr, 2020 - Mar, 2023

ニラウラマダン
CdTe成長層を用いた医療用高感度大面積Ｘ線画像検出器アレイの開発

財）中谷医工計測技術振興財団平成28年度開発研究助成, 民間財団等, Apr, 2017 - Mar, 2018

ニラウラマダン
半導体放射線検出器の高性能化に関する研究

科学研究費助成事業, 基盤研究(B), 日本学術振興会, Apr, 2008 - Mar, 2011

ニラウラマダン
医療用高性能大面積半導体放射線画像検出器の開発

産業技術研究助成(NEDO), 経済産業省, Oct, 2003 - Sep, 2006

ニラウラマダン
テルル化カドミウムによる高エネルギー分解能放射線画像検出器の開発

科学研究費助成事業, 若手研究(B), 日本学術振興会, Apr, 2003 - Mar, 2006

ニラウラマダン

Industrial Property Rights

特願2017-107264 半導体放射線検出器

安田和人, ニラウラマダン
1691422 Method for manufacturing a semiconductor radiation detector

YASUDA, Kazuhito, NIRAULA, Madan
1691422 Method for manufacturing a semiconductor radiation detector

安田和人, ニラウラマダン
1691422 Method for manufacturing a semiconductor radiation detector

安田和人, ニラウラマダン
2011-109374 放射線検出器の製造方法

安田和人, ニラウラマダン
第4131498号半導体放射線検出器

安田和人, ニラウラマダン
第4107616号半導体放射線検出器の製造方法

安田和人, ニラウラマダン
US 7,355,185 Semiconductor Radiation Detector and Process for Producing the Same

Kazuhito Yasuda, Madan Niraula