2009年9月
Ferromagnetism in Cu-doped AlN films
APPLIED PHYSICS LETTERS
- ,
- ,
- ,
- ,
- 巻
- 95
- 号
- 11
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1063/1.3232238
- 出版者・発行元
- AMER INST PHYSICS
AlN films doped with 3.2-8.2 at. % Cu were deposited by helicon magnetron sputtering. The films exhibited ferromagnetism with a Curie temperature above 360 K. The observed magnetic anisotropy and exclusion of ferromagnetic contamination indicated that the ferromagnetism was the intrinsic property of Cu-doped AlN films. Room-temperature (RT) saturation magnetization (M(s)) tended to decrease with increasing Cu concentration and the maximum RT Ms obtained was about 8.5 emu/cm(3) (0.6 mu(B)/Cu). Vacuum annealing increased the RT M(s) values and meanwhile reduced ratio of N/(Al+Cu), which suggested that Al interstitial and N vacancy might contribute to the observed ferromagnetic behavior. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3232238]
- リンク情報
-
- DOI
- https://doi.org/10.1063/1.3232238
- Web of Science
- https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000270096900044&DestApp=WOS_CPL
- URL
- http://www.scopus.com/inward/record.url?eid=2-s2.0-70349506167&partnerID=MN8TOARS
- URL
- http://orcid.org/0000-0002-4113-5548
- ID情報
-
- DOI : 10.1063/1.3232238
- ISSN : 0003-6951
- ORCIDのPut Code : 24004581
- SCOPUS ID : 70349506167
- Web of Science ID : WOS:000270096900044