2005年3月
Efficient nitrogen incorporation into amorphous carbon films by double beam method
DIAMOND AND RELATED MATERIALS
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- 巻
- 14
- 号
- 3-7
- 開始ページ
- 970
- 終了ページ
- 974
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1016/j.diamond.2005.01.003
- 出版者・発行元
- ELSEVIER SCIENCE SA
Conductivity of amorphous carbon (a-C) was successfully controlled by incorporation of nitrogen atoms using a double beam method (DBM), where both rf nitrogen radical and if methane plasma sources were controlled separately to optimize the nitrogen incorporation. The as-grown a-C is p-type with a conductivity of 10(-11) Omega cm and activation energy (E-a) of 333 meV The addition of nitrogen atoms under varying nitrogen flow rate from 0 to 2.0 seem caused the conductivity to reach 10(-4) Omega cm as maximum and E-a of 41 meV at 1.5 seem. The optical band gap is shown to vary only marginally from standard of the as-grown of a-C film (1.39 eV) to 1.45 eV by nitrogen incorporation. The depth profile of a secondary ion mass spectroscopy (STMS) shows that the uniform concentration of C and N in the films and the sharp interface between nitrogen doped and undoped regions from the doped/undoped sandwich-like a-C structure. Furthermore, the changes in the chemical structure and relative bond fractions as a function of nitrogen flow rate are reported based on the results of an X-ray photoelectron spectroscopy and a Raman spectroscopy. (c) 2005 Elsevier B.V. All rights reserved.
- リンク情報
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- DOI
- https://doi.org/10.1016/j.diamond.2005.01.003
- Web of Science
- https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000229751400138&DestApp=WOS_CPL
- URL
- http://www.scopus.com/inward/record.url?eid=2-s2.0-18444376210&partnerID=MN8TOARS
- URL
- http://orcid.org/0000-0002-4113-5548
- ID情報
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- DOI : 10.1016/j.diamond.2005.01.003
- ISSN : 0925-9635
- ORCIDのPut Code : 24004652
- SCOPUS ID : 18444376210
- Web of Science ID : WOS:000229751400138