Boron-incorporated carbon films (a-C(B)) were deposited on a silicon substrate by pulsed laser deposition (PLD) of a graphite target at room temperature. The boron content was determined by X-ray photoelectron spectroscopy (XPS) to be in the range of 0.2-1.7 at.% in the films. These films were confirmed to be p-type due to the formation of a heterojunction between the a-C(B) carbon film and silicon substrate. The devices of C(B)/n-Si configuration show a maximum [open-circuit voltage] V-oc = 0.25 V, and [short-circuit current density] J(sc) = 2.1 mA/cm(2) under illumination (AM 1.5, 100 mW/cm(2)).