This paper reports on the successful deposition of boron (B) doped carbon films (p-C(B)) and fabrication of p-C(B)/n-Si solar cells by pulsed laser deposition (PLD) technique at room temperature using graphite target. The B content in the film was determined by X-ray photoelectron spectroscopy (XPS) to be in the range of 0.2-1.7 atomic percentage. The photovoltaic values of the device, a maximum open circuit voltage, V-oc =250 mV and short circuit current density, J sc =2.113 mA/cm(2) were obtained, when exposed to AM 1.5 illumination (100 mW/cm(2) , 25degreesC). The maximum energy conversion efficiency was found tentatively to be about, eta=0.2%, together with the fill factor, FF=45%. In this paper, the dependence of the B content on electrical and optical properties of the p-C(B) films and the photovoltaic characteristic of the p-C(B)/n-Si structure photovoltaic solar cells are discussed.