1991年12月
MOCVD-GROWN SQWS ON SI WITH ALGAAS/ALGAP INTERMEDIATE LAYERS AND/OR THERMAL CYCLE ANNEALING - APPLICATION TO ROOM-TEMPERATURE CW LASERS
JOURNAL OF CRYSTAL GROWTH
- ,
- ,
- ,
- 巻
- 115
- 号
- 1-4
- 開始ページ
- 524
- 終了ページ
- 528
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1016/0022-0248(91)90798-A
- 出版者・発行元
- ELSEVIER SCIENCE BV
We have studied the heterointerfaces of single quantum wells (SQWs) and the characteristics of SQW lasers on Si grown with Al0.5Ga0.5As/Al0.55Ga0.45P intermediate layers (AlGaAs/AlGaP ILs) by the metalorganic chemical vapor deposition (MOCVD) technique, and compare them with those grown by the two-step growth technique. The surface morphology and the heterointerfaces of SQWs on Si substrates grown with AlGaAs/AlGaP ILs are smoother than those of the two-step-grown sample. This is caused by the two-dimensional growth of the AlGaAs/AlGaP ILs. Thermal cycle annealing is found to reduce the propagation of the dislocations into the GaAs layers on Si. Excellent lasting characteristics are obtained by the AlGaAs/AlGaP ILs, which are caused by the smooth heterointerfaces. It is shown that the AlGaAs/AlGaP ILs have played an important role in achieving smooth heterointerfaces and the excellent characteristics of the SQW laser on a Si substrate.
- リンク情報
- ID情報
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- DOI : 10.1016/0022-0248(91)90798-A
- ISSN : 0022-0248
- ORCIDのPut Code : 24004419
- Web of Science ID : WOS:A1991HF18700095
- ORCIDで取得されたその他外部ID : a:1:{i:0;a:1:{s:8:"other-id";s:19:"WOS:A1991HF18700095";}}