MARUYAMA Takeo

J-GLOBAL         Last updated: Oct 24, 2018 at 14:23
 
Avatar
Name
MARUYAMA Takeo
Affiliation
Kanazawa University
Section
Institute of Science and Engineering, Faculty of Electrical and Computer Engineering, Institute of Science and Engineering, Faculty of Electrical and Computer Engineering
Degree
Doctor of Engineering(Tokyo Institute of Technology)

Research Areas

 
 

Academic & Professional Experience

 
2002
 - 
2004
: Tokyo Institute of Technology Research Associate 
 
2004
 - 
2007
: Tokyo Institute of Technology Research Associate 
 
2007
 - 
2008
: Tokyo Institute of Technology Assistant Professor 
 
2008
   
 
-: Kanazawa University 
 

Education

 
 
 - 
2002
Department of Physical Electronics, Graduate School, Division of Science and Engineering, Tokyo Institute of Technology
 
 
 - 
1997
Department of Electrical Electronic Engineering, Faculty of Engineering, Tokyo Institute of Technology
 

Awards & Honors

 
2008
Hiroshi Ando Memorial Young Engineer Award
 

Published Papers

 
Iiyama Koichi, Maruyama Takeo, Gyobu Ryoichi, Hishiki Takuya, Shimotori Toshiyuki
IEICE TRANSACTIONS ON ELECTRONICS   E101C(7) 574-580   Jul 2018   [Refereed]
Putra Alexander William Setiawan, Yamada Minoru, Ambran Sumiaty, Maruyama Takeo
IEEE PHOTONICS TECHNOLOGY LETTERS   30(8) 756-759   Apr 2018   [Refereed]
Napiah Zul Atfyi Fauzan Mohammed, Gyobu Ryoichi, Hishiki Takuya, Maruyama Takeo, Iiyama Koichi
IEICE TRANSACTIONS ON ELECTRONICS   E99C(12) 1304-1311   Dec 2016   [Refereed]
Li Gen, Maekita Kazuaki, Mitsuno Hiroya, Maruyama Takeo, Iiyama Koichi
JAPANESE JOURNAL OF APPLIED PHYSICS   54(4)    Apr 2015   [Refereed]
Morino Hisayasu, Maruyama Takeo, Iiyama Koichi
JOURNAL OF LIGHTWAVE TECHNOLOGY   32(12) 2188-2192   Jun 2014   [Refereed]
Li Gen, Maruyama Takeo, Iiyama Koichi
JAPANESE JOURNAL OF APPLIED PHYSICS   53(4)    Apr 2014   [Refereed]
Maekita Kazuaki, Maruyama Takeo, Iiyama Koichi, Suzuki Toshi-kazu
JAPANESE JOURNAL OF APPLIED PHYSICS   53(2)    Feb 2014   [Refereed]
HIGH SPEED OPERATION OF SOI PIN PHOTODIODES FABRICATED BY CMOS COMPATIBLE PROCESS
2014 OPTOELECTRONICS AND COMMUNICATIONS CONFERENCE AND AUSTRALIAN CONFERENCE ON OPTICAL FIBRE TECHNOLOGY (OECC/ACOFT 2014)   506-508   2014   [Refereed]
10 GHz bandwidth of Si avalanche photodiode fabricated by standard 0.18 mu m CMOS process
2014 OPTOELECTRONICS AND COMMUNICATIONS CONFERENCE AND AUSTRALIAN CONFERENCE ON OPTICAL FIBRE TECHNOLOGY (OECC/ACOFT 2014)   243-244   2014   [Refereed]
Arai Shigehisa, Nishiyama Nobuhiko, Maruyama Takeo, Okumura Tadashi
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS   17(5) 1381-1389   Sep 2011   [Refereed]