2015年2月
Optical Properties of Ga0.82In0.18N P-N Homojunction Blue-Green Light-Emitting-Diode Grown by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy
Trans. Mat. Res. Soc. Japan
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- 巻
- 40
- 号
- 2
- 開始ページ
- 149-152
- 終了ページ
- 152
- 記述言語
- 日本語
- 掲載種別
- DOI
- 10.14723/tmrsj.40.149
- 出版者・発行元
- The Materials Research Society of Japan
Optical properties of Ga0.82In0.18N p-n homojunction light-emitting-diode are investigated by the photovoltaic, photoluminescence-excitation, electroluminescence (EL), and photoluminescence (PL) measurements. Although the X-ray diffraction measurements indicate a uniform InN molar fraction x in the sequentially grown n- and p-type Ga0.82In0.18N layers, the EL and PL exhibited different peak energies at room temperature. The difference is explained by the emission models in the n- and p-type of Ga0.82In0.18N layers. The results demonstrate a potential use of Ga1-xInxN p-n homojunction for further development of functional device structures.
- リンク情報
- ID情報
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- DOI : 10.14723/tmrsj.40.149
- ISSN : 1382-3469
- CiNii Articles ID : 130005089534