論文

2015年2月

Optical Properties of Ga0.82In0.18N P-N Homojunction Blue-Green Light-Emitting-Diode Grown by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy

Trans. Mat. Res. Soc. Japan
  • T. Onuma
  • ,
  • K. Narutani
  • ,
  • S. Fujioka
  • ,
  • T. Yamaguchi
  • ,
  • K. Wang
  • ,
  • T. Araki
  • ,
  • Y. Nanishi
  • ,
  • L. Sang
  • ,
  • M. Sumiya
  • ,
  • T. Honda

40
2
開始ページ
149-152
終了ページ
152
記述言語
日本語
掲載種別
DOI
10.14723/tmrsj.40.149
出版者・発行元
The Materials Research Society of Japan

Optical properties of Ga0.82In0.18N p-n homojunction light-emitting-diode are investigated by the photovoltaic, photoluminescence-excitation, electroluminescence (EL), and photoluminescence (PL) measurements. Although the X-ray diffraction measurements indicate a uniform InN molar fraction x in the sequentially grown n- and p-type Ga0.82In0.18N layers, the EL and PL exhibited different peak energies at room temperature. The difference is explained by the emission models in the n- and p-type of Ga0.82In0.18N layers. The results demonstrate a potential use of Ga1-xInxN p-n homojunction for further development of functional device structures.

リンク情報
DOI
https://doi.org/10.14723/tmrsj.40.149
CiNii Articles
http://ci.nii.ac.jp/naid/130005089534
URL
https://jlc.jst.go.jp/DN/JLC/20012896286?from=CiNii
ID情報
  • DOI : 10.14723/tmrsj.40.149
  • ISSN : 1382-3469
  • CiNii Articles ID : 130005089534

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