2014年7月
Radio-frequency plasma-excited molecular beam epitaxy growth of GaN on graphene/Si(100) substrates
APPLIED PHYSICS EXPRESS
- 巻
- 7
- 号
- 7
- 開始ページ
- 071001/1-3
- 終了ページ
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.7567/APEX.7.071001
- 出版者・発行元
- IOP PUBLISHING LTD
Strong c-axis-oriented hexagonal (0001) GaN was grown on graphene/Si(100) substrates by radio-frequency plasma-excited molecular beam epitaxy. The hexagonal symmetry of graphene transferred onto the Si(100) surface enabled the growth of a highly c-axis-oriented GaN film. The GaN showed a full width at half maximum of 11.3 arcmin for a (0002) rocking curve measured by X-ray diffraction. Strong luminescence at 3.4 eV was also observed by cathodoluminescence with a luminescence at 3.2 eV, which originated from a cubic-phase inclusion. A microstructural study using transmission electron microscopy also confirmed the growth of hexagonal (0001) GaN on a graphene/Si(100) substrate. (C) 2014 The Japan Society of Applied Physics
- リンク情報
- ID情報
-
- DOI : 10.7567/APEX.7.071001
- ISSN : 1882-0778
- eISSN : 1882-0786
- Web of Science ID : WOS:000339930100001