Tsutomu Araki

Profile Information

Affiliation: Professor, College of Science and Engineering, Department of Electrical and Electronic Engineering, Ritsumeikan University
: (Concurrent)Research Organization of Science and Technology, Advanced Micro/Nano System Technology Research Center
: (Concurrent)Graduate School of Science and Engineering

Degree: Ph.D. (Engineering)(Osaka Prefecture University)

J-GLOBAL ID: 200901011405311577
researchmap Member ID: 5000044964

External link: http://www.ritsumei.ac.jp/se/re/taraki/index.html

Research Interests

electronic materials engineering, crystal engineering

Education

Awards

Sep, 2005

応用物理学会論文賞, 応用物理学会

Papers

179

Characterization of the Electrical Properties of an InN Epilayer Using Terahertz Time-Domain Spectroscopic Ellipsometry

K. Morino, S. Arakawa, T. Fujii, S. Mouri, T. Araki, Y. Nanishi

Jpn. J. Appl. Phys., 58(SC) SCCB22/1-4, Jun, 2019
Metal Covered van der Waals Epitaxy of Gallium Nitride Films on Graphitic Substrates by ECR-MBE

U. Ooe, S. Mouri, S. Arakawa, F. Abas, Y. Nanishi, T. Araki

Jpn. J. Appl. Phys., 58(SC) SC1053/1-5, Jun, 2019
Enhancement of InN Luminescence by Introduction of Graphene Interlayer

D. Dobrovolskas, S. Arakawa, S. Mouri, T. Araki, Y. Nanishi, J. Mickevičius, G. Tamulaitis

nanomaterials, 9(3) 417/1-8, Mar, 2019
Luminescence from AlGaN/GaN HEMT Structures by Very-Low-Energy (100 eV) Electron Beams using Beam Deceleration Technique

R. Sugie, T. Uchida, T. Fujii, T. Araki

Jpn. J. Appl. Phys., 58(1) 010902/1-4, Jan, 2019
Surface and bulk electronic structures of unintentionally and Mg-doped In0.7Ga0.3N epilayer by hard X-ray photoelectron spectroscopy

Masataka Imura, Shunsuke Tsuda, Hiroyuki Takeda, Takahiro Nagata, Ryan G. Banal, Hideki Yoshikawa, Anli Yang, Yoshiyuki Yamashita, Keisuke Kobayashi, Yasuo Koide …

Journal of Applied Physics, 123(9) 095701/1-8, Mar 7, 2018
Threading dislocation reduction in InN grown with in situ surface modification by radical beam irradiation

Faizulsalihin Bin Abas, Ryoichi Fujita, Shinichiro Mouri, Tsutomu Araki, Yasushi Nanishi

Japanese Journal of Applied Physics, 57(3) 035502/1-4, Mar 1, 2018
Reduction of Threading Dislocation Density in InN Film Grown with in situ Surface Modification by Radio-frequency Plasma-excited Molecular Beam Epitaxy

F. B. Abas, R. Fujita, S. Mouri, T. Araki, Y. Nanishi

MRS Advances, 3(18) 931-936, 2018
Measurement of the properties of GaN layers using terahertz time-domain spectroscopic ellipsometry

Kohei Tachi, Shiho Asagami, Takashi Fujii, Tsutomu Araki, Yasushi Nanishi, Takeshi Nagashima, Toshiyuki Iwamoto, Yukinori Sato, Naotake Morita, Ryuichi Sugie …

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 254(8) 1600767/1-4, Aug, 2017
Microstructure and thermal stability of rf-plasma-nitridated alpha-(AlGa)(2)O-3 grown by mist CVD

A. Buma, N. Masuda, T. Araki, Y. Nanishi, M. Oda, T. Hitora

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 254(8) 1600768/1-4, Aug, 2017
Surface and bulk electronic structures of heavily Mg-doped InN epilayer by hard X-ray photoelectron spectroscopy

Masataka Imura, Shunsuke Tsuda, Takahiro Nagata, Ryan G. Banal, Hideki Yoshikawa, Anli Yang, Yoshiyuki Yamashita, Keisuke Kobayashi, Yasuo Koide, Tomohiro Yamaguchi …

JOURNAL OF APPLIED PHYSICS, 121(9) 095703/1-5, Mar, 2017
Influence of defects and indium distribution on emission properties of thick In-rich InGaN layers grown by the DERI technique

Darius Dobrovolskas, Juras Mickevicius, Saulius Nargelas, Augustas Vaitkevicius, Yasushi Nanishi, Tsutomu Araki, Gintautas Tamulaitis

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 32(2) 025012/1-6, Feb, 2017
InN nanocolumns grown by molecular beam epitaxy and their luminescence properties

K. Wang, T. Araki, T. Yamaguchi, Y. T. Chen, E. Yoon, Y. Nanishi

JOURNAL OF CRYSTAL GROWTH, 430(93-37) 93-97, Nov, 2015
Optical Properties of Ga0.82In0.18N P-N Homojunction Blue-Green Light-Emitting-Diode Grown by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy

T. Onuma, K. Narutani, S. Fujioka, T. Yamaguchi, K. Wang, T. Araki, Y. Nanishi, L. Sang, M. Sumiya, T. Honda

Trans. Mat. Res. Soc. Japan, 40(2) 149-152-152, Feb, 2015
Free-Charge Carrier Parameters of N-Type, P-Type and Compensated InN:Mg Determined by Infrared Spectroscopic Ellipsometry

S. Schöche, T. Hofmann, V. Darakchieva, X.Wang, A. Yoshikawa, K.Wang, T. Araki, Y. Nanishi, M. Schubert

Thin Solid Films, 571 384-388, Nov, 2014
Radio-frequency plasma-excited molecular beam epitaxy growth of GaN on graphene/Si(100) substrates

Tsutomu Araki, Satoru Uchimura, Junichi Sakaguchi, Yasushi Nanishi, Tatsuya Fujishima, Allen Hsu, Ki Kang Kim, Tomas Palacios, Amaia Pesquera, Alba Centeno …

APPLIED PHYSICS EXPRESS, 7(7) 071001/1-3, Jul, 2014
Effect of Mg Doping on the Structural and Free-Charge Carrier Properties of InN Thin Films

M.-Y. Xie, N. Ben Sedrine, S. Sch ̈oche, T. Hofmann, M. Schubert, L. Hong, B. Monemar, X. Wang, A. Yoshikawa, K. Wang …

J. Appl. Phys., 105 163504/1-10, Apr, 2014
Selective Growth of N-polar InN Through an In Situ AlN Mask on a Sapphire Substrate

K. Wang, T. Araki, M. Takeuchi, E. Yoon, Y. Nanishi

Appl. Phys. Lett., 104 032108/1-5, Jan, 2014
The Mg Impurity in Nitride Alloys

M. E. Zvanut, W. R. Willoughby, U. R. Sunay, D. D. Koleske, A. A. Allerman, Ke Wang, Tsutomu Araki, Yasushi Nanishi

INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS 2013, 1583 277-281, 2014
The effect of growth parameters on the Mg acceptor in InxGa1-xN:Mg and AlxGa1-xN:Mg

M. E. Zvanut, W. R. Willoughby, U. R. Sunay, D. D. Koleske, A. A. Allerman, Ke Wang, Tsutomu Araki, Yasushi Nanishi

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 3-4, 11(3-4) 594-597, 2014
Nucleation of Single GaN Nanorods with Diameters Smaller than 35 nm by Molecular Beam Epitaxy

Y. Chen, T. Araki, J. Palisaitis, P. O. A°. Persson, L. Chen, K. Chen, P. O. Holtz, J. Birch, Y. Nanishi

Appl. Phys. Lett., 103 203108/1-5, Nov, 2013

Books and Other Publications

Indium Nitride and Related Alloys

Y. Nanishi, T. Araki, T. Yamaguchi

CRC, 2009

Presentations

681

Effect of In Adlayer on MBE Growth of InN by DERI Method

38th Electronic Materials Symposium, Oct 10, 2019
Van der Waals Epitaxy of GaN on Graphene by ECR-MBE

Recent Progress in Graphene & 2D Materials Research (RPGR 2019), Oct 8, 2019
Photoluminescence Properties of MoS2/GaN Hetero Structure

Recent Progress in Graphene & 2D Materials Research (RPGR 2019), Oct 7, 2019
縦型GaNデバイスに向けたレーザー誘起高性能・局所オーミック電極形成法の開発

2019年秋季第80回応用物理学会学術講演会, Sep 21, 2019
THz-TDSEによるイオン注入した4H-SiCの電気特性評価

2019年秋季第80回応用物理学会学術講演会, Sep 20, 2019
CZ法ScAlMgO4(SCAM)結晶のX線トポグラフ観察と光学特性評価

2019年秋季第80回応用物理学会学術講演会, Sep 18, 2019
電極を用いないサファイア上グラフェンの電気特性測定

2019年秋季第80回応用物理学会学術講演会, Sep 18, 2019
高品質AlN上RF-MBE成長InNの極微構造評価

2019年秋季第80回応用物理学会学術講演会, Sep 18, 2019
InGaNの表面-バルク電子状態評価

2019年秋季第80回応用物理学会学術講演会, Sep 18, 2019
ECR-MBE法を用いたMoS2上へのGaN薄膜成長

2019年秋季第80回応用物理学会学術講演会, Sep 18, 2019
Photoluminescence Properties of MoS2/GaN Hetero Structure

19th International Conference on Crystal Growth and Epitaxy (ICCGE), Jul 29, 2019
Effect of In Adlayer on MBE Growth of InN by DERI Method

19th International Conference on Crystal Growth and Epitaxy (ICCGE), Jul 29, 2019
In Situ XRD RSM Measurements in MBE Growth of GaInN at Different Temperatures

The 13th International Conference on Nitride Semiconductors (ICNS-13), Jul 11, 2019
Remote Homoepitaxy of GaN on Graphene Using RF-MBE

The 13th International Conference on Nitride Semiconductors (ICNS-13), Jul 9, 2019
RF-MBE InN Growth on High-Quality AlN Template

The 13th International Conference on Nitride Semiconductors (ICNS-13), Jul 9, 2019
Structural Analyses of GaInN Films Grown at Different Temperatures on (0001)GaN/a-Al2O3 Templates by RF-MBE

The 13th International Conference on Nitride Semiconductors (ICNS-13), Jul 8, 2019
THz-TDSEを用いた3層構造SiCウエハのバッファ層の電気特性評価

第11回ナノ構造・エピタキシャル成長講演会, Jun 14, 2019
RF-MBE法を用いた高品質AlN上へのInN成長

第11回ナノ構造・エピタキシャル成長講演会, Jun 13, 2019
DERI法によるInN成長におけるInウェッティング層の効果

第11回ナノ構造・エピタキシャル成長講演会, Jun 13, 2019
RF-MBE 成長InN に対する熱処理の効果

第11回ナノ構造・エピタキシャル成長講演会, Jun 13, 2019

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