論文

査読有り
2017年10月

Hole doping effect on the electronic structure of layered oxypnictide LaOMnAs

JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA
  • A. Higashiya
  • ,
  • K. Nakagawa
  • ,
  • A. Yamasaki
  • ,
  • K. Nagai
  • ,
  • S. Fujioka
  • ,
  • Y. Kanai
  • ,
  • K. Yamagami
  • ,
  • H. Fujiwara
  • ,
  • A. Sekiyama
  • ,
  • Amina Abozeed
  • ,
  • T. Kadono
  • ,
  • S. Imada
  • ,
  • K. Kuga
  • ,
  • M. Yabashi
  • ,
  • K. Tamasaku
  • ,
  • T. Ishikawa
  • ,
  • S. Toyama
  • ,
  • K. Takase

220
開始ページ
58
終了ページ
60
記述言語
英語
掲載種別
研究論文(学術雑誌)
DOI
10.1016/j.elspec.2017.01.006
出版者・発行元
ELSEVIER SCIENCE BV

Layered oxypnictide LaOMnAs shows an antiferromagnetic insulator-to-ferromagnetic metal transition at room temperature with increasing the defect of LaO layer which induces hole doping into the MnAs layers. In order to reveal the details of the transition, we have performed hard-X-ray photoelectron spectroscopy for the insulating LaOMnAs and metallic (LaO)(0.7)MnAs. The spectral changes in the valence band, mainly composed of Mn 3d states, Mn 2p core levels, and La 3d core-levels have been observed across the transition. Our results indicated that Mn 3d state was significantly influenced by the defect of LaO layer. (C) 2017 Elsevier B.V. All rights reserved.


リンク情報
DOI
https://doi.org/10.1016/j.elspec.2017.01.006
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000415785300016&DestApp=WOS_CPL