2018年8月1日
Synthesis of platinum silicide at platinum/silicon oxide interface by photon irradiation
Acta Materialia
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- 巻
- 154
- 号
- 開始ページ
- 284
- 終了ページ
- 294
- 記述言語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1016/j.actamat.2018.05.045
- 出版者・発行元
- Elsevier {BV}
© 2018 Acta Materialia Inc. The synthesis of platinum silicide at a Pt/SiOx interface by photon irradiation was investigated using transmission electron microscopy. A platinum silicide, Pt2Si, was successfully formed at the Pt/SiOx interface by irradiation with 680 and 140 eV photons, but not by irradiation with 80 eV photons. Silicide formation was also induced by irradiation with electrons of energy 75 keV. The amount of silicide formed by photon irradiation was lower than the amount obtained by electron irradiation. Silicide formation by both photon and electron irradiation was accompanied by Si depletion in amorphous SiOx. The experimental results indicate that silicide formation is induced by electronic excitation. A possible mechanism for silicide formation is proposed on the basis of the results.
- リンク情報
- ID情報
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- DOI : 10.1016/j.actamat.2018.05.045
- ISSN : 1359-6454
- SCOPUS ID : 85047439477