2007年
Mechanism of electron-hole pair generation and light emission for electro-luminescence devices with silicon nano-crystals prepared by laser ablation method
PHYSICS OF SEMICONDUCTORS, PTS A AND B
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- 巻
- 893
- 号
- 開始ページ
- 1433
- 終了ページ
- +
- 記述言語
- 英語
- 掲載種別
- 研究論文(国際会議プロシーディングス)
- DOI
- 10.1063/1.2730444
- 出版者・発行元
- AMER INST PHYSICS
Mechanism of electron-hole pair generation and light emission for electro-lumniescence devices with silicon nano-crystals prepared by laser ablation method is studied. It is found that the properties of the present device are strongly influenced by the existence of the high electric field, which stems from the band discontinuity at the boundary between ITO and the Si nano-crystalline layer.
- リンク情報
- ID情報
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- DOI : 10.1063/1.2730444
- ISSN : 0094-243X
- Web of Science ID : WOS:000246281800704