2002年4月
High-temperature scanning tunneling microscopy study of Si(111) surface structure changes caused by Ga surface diffusion
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
- ,
- ,
- 巻
- 41
- 号
- 4A
- 開始ページ
- 2176
- 終了ページ
- 2182
- 記述言語
- 英語
- 掲載種別
- DOI
- 10.1143/JJAP.41.2176
- 出版者・発行元
- INST PURE APPLIED PHYSICS
In order to clarify dynamical transition behaviors among Ga-induced superstructures' on Si(111) surface, a Ga block was placed on a Si(111) surface elevated at 175degreesC and 500degreesC and surface structure changes caused by Ga surface diffusion from the Ga block were in-situ studied by high-temperature scanning tunneling microscopy. Successive structure changes from 7 x 7 dimer adatom stacking-fault (DAS) to 6.3 x 6.3 structure through alpha'-7 x 7 were observed in detail on the Si(111) surface at 170degreesC. No intermediate structure appeared between 7 x 7 DAS and (root3 xroot3)R30 structures on the Si(111) surface at 500degreesC.
- リンク情報
- ID情報
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- DOI : 10.1143/JJAP.41.2176
- ISSN : 0021-4922
- Web of Science ID : WOS:000175703100049