論文

査読有り 本文へのリンクあり
2019年

Relationship between oxygen additive amount and photoresist removal rate using h radicals generated on an iridium hot-wire catalyst

Journal of Photopolymer Science and Technology
  • Masashi Yamamoto
  • ,
  • Tomohiro Shiroi
  • ,
  • Tomokazu Shikama
  • ,
  • Shiro Nagaoka
  • ,
  • Hironobu Umemoto
  • ,
  • Hideo Horibe

32
4
開始ページ
609
終了ページ
614
記述言語
英語
掲載種別
研究論文(学術雑誌)
DOI
10.2494/photopolymer.32.609
出版者・発行元
TECHNICAL ASSOC PHOTOPOLYMERS,JAPAN

© 2019 SPST. We examined an environmentally friendly photoresist removal method using radicals produced by decomposing mixtures of hydrogen and oxygen on a hot iridium catalyst. We earlier reported that the decomposition of photoresists was hastened by adding oxygen gas to a hydrogen flow using a tungsten hot-wire catalyst. The rate increased with the oxygen additive amount up to about 1.0% and then decreased gradually. The decrease is caused by the catalytic poisoning of O atoms on the catalyst surface because of its poor oxidation resistance. In present study, we show that oxygen addition without catalytic poisoning is effective to increase the decomposition rate. The poisoning can be avoided by using an Ir catalyst. The decomposition rate increased with the substrate temperature. The rate also increased rapidly with increasing amounts of added oxygen to 1.0% and then the increase became more gradual. OH radicals must play an important role to hasten the decomposition reactions.

リンク情報
DOI
https://doi.org/10.2494/photopolymer.32.609
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000475836000012&DestApp=WOS_CPL
Scopus
https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85075151572&origin=inward 本文へのリンクあり
Scopus Citedby
https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=85075151572&origin=inward
ID情報
  • DOI : 10.2494/photopolymer.32.609
  • ISSN : 0914-9244
  • eISSN : 1349-6336
  • SCOPUS ID : 85075151572
  • Web of Science ID : WOS:000475836000012

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