Yasuo Takahashi


Yasuo Takahashi

J-GLOBAL         Last updated: Oct 12, 2018 at 16:21
 
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Name
Yasuo Takahashi
URL
http://www.nano.eng.hokudai.ac.jp/~bukkou/index.html
Affiliation
Hokkaido University
Section
Graduate School of Information Science and Technology, Division of Electronics for Informatics, Advanced Electronics
Job title
Professor
Degree
Ph. D, 1982(Tohoku University)

Research Areas

 
 

Academic & Professional Experience

 
1982
 - 
1983
 Researcher,NTT (Nippon Telegraph and Telephone Corporation) Musashino Lab.
 
1983
 - 
1986
 Researcher,NTT Atsugi Lab.
 
1986
 - 
1990
 Chief Researcher,NTT LSI Lab.
 
1990
 - 
1996
 Senior Research Engineer supervisor,NTT LSI Labs.
 
1996
 - 
1999
 Senior Research Engineer supervisor,NTT Basic Research Labs.
 
1999
 - 
2004
 Group Leader, Silicon Nanodevice Research Group,NTT Basic Research Labs.
 
2002
 - 
2004
 Dean,Device Physics Lab., NTT Basic Research Labs.
 

Education

 
 
 - 
1982
Graduate School, Division of Engineering, Tohoku University
 
 
 - 
1977
Tohoku University
 

Awards & Honors

 
Apr 2014
APEX/JJAP Editorial Contribution Award, APEX/JJAP Editorial Contribution Award, The Japan Society of Applied Phisics
 
1998
In 1998, Int. Solid State Devices and Materials Conf., Best Paper Award In 1999, IEEE Int. SOI Conference, Best Paper Award In 2003, IEEE Computer Society 33th ISMVL Distinctive Contributed Paper Award In 2003, Award for the best original paper in J・・・
 
In 1998, Int. Solid State Devices and Materials Conf., Best Paper Award In 1999, IEEE Int. SOI Conference, Best Paper Award In 2003, IEEE Computer Society 33th ISMVL Distinctive Contributed Paper Award In 2003, Award for the best original paper...

Published Papers

 
H. Firdaus, T. Watanabe, M. Hori, D. Moraru, Y. Takahashi, A. Fujiwara, Y. Ono
Applied Physics Letters   113    Dec 2018   [Refereed]
EELS Analysis on Oxygen Scavenging Effect in a Resistive Switching Structure of Pt/Ta/SrTiO3/Pt,
Atsushi Tsurumaki-Fukuchi,* Ryosuke Nakagawa, Masashi Arita, and Yasuo Takahashi
MRS Advances   33(3) 1925-1930   Jan 2018   [Refereed]
Smooth Interfacial Scavenging for Resistive Switching Oxide via the Formation of Highly Uniform Layers of Amorphous TaOx
Atsushi Tsurumaki-Fukuchi, Ryosuke Nakagawa, Masashi Arita, and Yasuo Takahashi
ACS Applied Materials & Interface   10 5609-5617   Jan 2018   [Refereed]
Probing Electrochemistry at the Nanoscale: In Situ TEM and STM Characterizations of Conducting Filaments in Memristive Devices
Yuchao Yang, Yasuo Takahashi, Atsushi Tsurumaki-Fukuchi, Masashi Arita, M. Moors, M. Buckwell, A. Mehonic, and A. J. Kenyon
Journal of Electroceramics   39(1-4) 73-93   Dec 2017   [Refereed][Invited]
In-situ electron microscopy of Cu movement in MoOx/Al2O3 bilayer CBRAM during cyclic switching process
Ryusuke Ishikawa, Shuichiro Hirata, Atsushi Tsurumaki-Fukuchi, Masashi Arita, Yasuo Takahashi, Masaki Kudo, and Sho Matsumura
ECS Transactions   80(10) 903-910   Nov 2017   [Refereed]
Observation of Conductive Filament in CBRAM at Switching Moment
Satoshi Muto, Ryota Yonesaka, Atsushi Tsurumaki-Fukuchi, Masashi Arita, and Yasuo Takahashi
ECS Transactions   80(10) 895-902   Nov 2017   [Refereed]
Evaluation of Coupled Triple Quantum Dots with Compact Device Structure
Yasuo Takahashi, Takafumi Uchida, Atsushi Tsurumaki-Fukuchi, Masashi Arita, and Akira Fujiwar
ECS Transactions   80(4) 173-180   Sep 2017   [Refereed][Invited]
Takafumi Uchida, Mingyu Jo, Atsushi Tsurumaki-Fukuchi, Masashi Arita, Akira Fujiwara, and Yasuo Takahashi
Journal of Applied Physics   120(234502) 1-6   Dec 2016   [Refereed]
Brownian Circuits: Designs
Jia Lee, Ferdinand Peper, Sorin D. Cotofana, Makoto Naruse, Motoichi Ohtsu, Tadashi Kawazoe, Yasuo Takahashi, Tetsuya Shimokawa, Laszlo B. Kish, and Tohru Kubota
International Journal of Unconventional Computing   12(5-6) 341-362   Dec 2016   [Refereed]
Investigation on switching operation in resistive RAM using in-situ TEM
M. Arita, Y. Takahashi
Proc. 3rd International Multidisciplinary Microscopy and Microanalysis Congress (InterM)   205-214   Nov 2016   [Refereed][Invited]
Ryouta Yonesaka, *Satoshi Muto, Atsushi Tsurumaki-Fukuchi,, Masashi Arita, and Yasuo Takahashi
Proceedings of the 16th International Conference on Nanotechnology   790-791   Aug 2016   [Refereed]
Takashi Morie, Haichao Liang, Takashi Tohara, Hirofumi Tanaka, Makoto Igarashi, Seiji Samukawa, Kazuhiko Endo, and Yasuo Takahashi
Proceedings of the 16th International Conference on Nanotechnology   390-392   Aug 2016   [Refereed][Invited]
T. Uchida, M. Jo, A. Tsurumaki-Fukuchi, M. Arita, A. Fujiwara, and Y. Takahashi
Proceedings of the 16th International Conference on Nanotechnology   119-122   Aug 2016   [Refereed]
M. Arita, Y. Ohno, Y. Murakami, K. Takamizawa, A. Tsurumaki-Fukuchi, Y. Takahashi
Nanoscale   8 14754-14766   Aug 2016   [Refereed]
H. W. Kye, B. N. Song, S. E. Lee, J. S. Kim, S. J. Shin, Jung-Bum Choi, Y. S. Yu, and Y. Takahashi
AIP Advances   6(025320) 1-6   Feb 2016   [Refereed]
Takashi Tohara, Haichao Liang, Hirofumi Tanaka, Makoto Igarashi, Seiji Samukawa, Kazuhiko endo, Yasuo Takahashi, and Takashi Morie
Applied Physics Express,   9(034201) 1-4   Feb 2016   [Refereed]
Masashi Arita, Yuuki Ohno, and Yasuo Takahashi
Switching of Cu/MoOx/TiN CBRAM occurred at MoOx-TiN interface
Physica Status Solidi A   213(2) 306-310   Feb 2016   [Refereed]
Identification of Double Quantum Dots in Nanowire Devices by Single-Gate Sweeps
Hiroshi Inokawa and Yasuo Takahashi
JJAP Conference Proceedings   4(011201) 1-5   2016   [Refereed]
Mingyu Jo, Takafumi Uchida, Atsushi Tsurumaki-Fukuchi, Masashi Arita, Akira Fujiwara, Yukinori Ono, Katsuhiko Nishiguchi, Hiroshi Inokawa, and Yasuo Takahashi
Journal of Applied Physics   118(214305) 1-6   Dec 2015   [Refereed]
Masashi Arita, Akihito Takahashi, Yuuki Ohno, Akitoshi Nakane, Atsushi Tsurumaki-Fukuchi, and Yasuo Takahashi
Scientific Reports   5(17103) 1-9   Nov 2015   [Refereed]

Misc

 
Tunnel conductance measurements of nano-regions performed in transmission electron microscopes
43(3) 181-187   2008
Integrated Circuits made of Silicon Single-Electron Devices
Oyo Buturi   77(3) 281-285   2008
Evolution of New Functional Devices as Beyond CMOS
The Journal of the Institute of Electrical Engineers of Japan   128(3) 169-171   2008

Books etc

 
Developing Nanosilicon Technology and Device Applications
2010   

Conference Activities & Talks

 
Double-gate single-electron transistor characteristics of single-layer Fe-MgF2 granular films
Takayuki Gyakushi, Yuki Asai, Atsushi Tsurumaki-Fukuchi, Masashi Arita, and Yasuo-Takahashi
30th International Microprocesses and Nanotechnology Conference (MNC 2018)   15 Nov 2018   
Shape change dynamics of Cu filament in double layer CBRAM
Ryusuke Ishikawa, Atsushi Tsurumaki-Fukuchi, Masashi Arita, Yasuo-Takahashi, Masaki Kudo, and Syo Matsumura
30th International Microprocesses and Nanotechnology Conference (MNC 2018)   15 Nov 2018   
Multilevel memory characteristics of Ta/Ta2O5-δ ReRAM for the Application of Neural Network
Yuanlin Li, Atsushi Tsurumaki-Fukuchi, Masashi Arita, Hideyuki Andoh, Takashi Morie, Yasuo Takahashi, and Seiji Samukawa
Fifteenth International Conference on Flow Dynamics (ICFD 2018)   8 Nov 2018   
Analog memory devices for time-domain weighted-sum calculation circuits
Kenya Yamashita, Masataka Harada, Takashi Morie, Atsushi Tsurumaki-Fukuchi, Masashi Arita, Yasuo Takahashi, and Seiji Samukawa
Fifteenth International Conference on Flow Dynamics (ICFD 2018)   8 Nov 2018   
Enhanced defect formation at metal/oxide interfaces and its application to resistive memory devices [Invited]
Atsushi Tsurumaki-Fukuchi, Masashi Arita, and Yasuo Takahashi
7th International Symposium on Transparent Conductive Materials and the 5th E-MRS & MRS-J Bilateral Symposium on Advanced Oxides (TCM-2018)   16 Oct 2018   
Study on Interfacial Redox Reactions of Tantalum as a Good Scavenger Material in ReRAM Devices
Atsushi Tsurumaki-Fukuchi, Masashi Arita, and Yasuo Takahashi
2018 International Conference on Solid State Devices and Materials (SSDM 2018)   10 Sep 2018   
In-situ electron miroscopy to investigate resistive RAM operations [Invited]
M. Arita, A. Tsurumaki-Fukuchi, and Y. Takahashi
2018 Collaborative Conference on Materials Research (CCMR 2018)   25 Jun 2018   
Investigation for Multilevel Memory Capability of ReRAM using Ta2O5-δ Insulator
Yuanlin Li, Reon Katsumura, Mika Kristian Grönroos, Atsushi Tsurumaki-Fukuchi, Masashi Arita, Hideyuki Andoh, Takashi Morie, and Yasuo Takahashi
2018 Silicon Nanoelectronics Workshop (SNW-2018)   18 Jun 2018   
In-situ TEM investigation on instability of ReRAM switching
Satoshi Muto, Shinya Sakai, Atsushi Tsurumaki-Fukuchi, Masashi Arita, and Yasuo Takahashi
EMRS 2018 Spring Meeting (EMRS-18)   18 Jun 2018   
Ultrahigh-Frequency Characteristics of Single-Electron Transistor
Hiroshi Inokawa, Tomoki Nishimura, Alka Singh, Hiroaki Satoh, and Yasuo Takahashi
2018 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)   7 Jun 2018   
Oxygen distribution around filament in Ta-O resistive RAM fabricated using 40 nm CMOS technology
M. Arita, A. Tsurumaki-Fukuchi, Y. Takahashi, Z. Wei, S. Muraoka, S. Ito, and S. Yoneda
2018 International Memory Workshop (IMW)   14 May 2018   
Electrical characteristics of Single-Electron Transistor Made of Fe-MgF2 Single-Layer Granular Thin Films
Yuki ASAI, Shusaku HONJO, Takayuki GYAKUSHI, Atsushi TSURUMAKI-FUKUCHI, Masashi ARITA and Yasuo TAKAHASHI
28 Feb 2018   
Investigations on Oxygen Scavenging Effect at Metal/Oxide Interfaces for Reliable Memory Applications
Ryosuke Nakagawa, Atsushi Tsurumaki-Fukuchi, Masashi Arita, and Yasuo Takahashi
2017 MRS Fall Meeting   28 Nov 2017   
Single Electron Transistor Characteristics of Fe-MgF2 Single-Layer Granular Films
Yuki Asai, Shusaku Honjo, Atsushi Tsurumaki-Fukuchi, Masashi Arita, and Yasuo-Takahashi
30th International Microprocesses and Nanotechnology Conference (MNC 2017)   7 Nov 2017   
ReRAM switching of planar Ag/WOx/Pt studied by in-situ TEM
Shinya Sakai, Satoshi Muto, Atsushi Tsurumaki-Fukuchi, Masashi Arita, and Yasuo-Takahashi
30th International Microprocesses and Nanotechnology Conference (MNC 2017)   7 Nov 2017   
Realization of Analog Memory using Ta2O5 Based ReRAM for the Application of Neural Network
Yuanlin Li, Reon Katsumura, Mika Kristian Grönroos, Atsushi Tsurumaki-Fukuchi, Masashi Arita, Hideyuki Ando, Takashi Morie, Yasuo Takahashi, and Seiji Samukawa
Fourteenth International Conference on Flow Dynamics (ICFD 2017)   2 Nov 2017   
Analog memory operation of parallel connected resistance change memory devices
M. Harada, H. Ando, T. Morie, R. Katsumura, A. Tsurumaki-Fukuchi, M. Arita, Y. Takahashi, and S. Samukawa
Fourteenth International Conference on Flow Dynamics   2 Nov 2017   
Evaluation of coupled triple quantum dots with compact device structure [Invited]
Yasuo Takahashi, Takafumi Uchida, Atsushi Tsurumaki-Fukuchi, Masashi Arita, and Akira Fujiwara
232th Electrochemical Society Meeting   3 Oct 2017   
In-situ TEM observation of lateral CBRAM during switching operation
Satoshi Muto, Ryota Yonesaka, Atsushi Tsurumaki-Fukuchi, Masashi Arita, and Yasuo Takahashi
232th Electrochemical Society Meeting   3 Oct 2017   
In-situ electron microscopy of Cu movement in MoOx/Al2O3 bilayer CBRAM during cyclic switching process
Ryusuke Ishikawa, Shuichiro Hirata, Atsushi Tsurumaki-Fukuchi, Masashi Arita, Yasuo Takahashi, Masaki Kudo, Sho Matsumura
232th Electrochemical Society Meeting   3 Oct 2017   

Research Grants & Projects

 
Fabrication of semiconductor nanodots and metal nanodots and their device applications, especially for single electronics.
Project Year: 1992   

Patents

 
特許5583738 : 抵抗変化型メモリ
高橋庸夫、有田正志、藤井孝史、梶宏道、近藤洋史、茂庭昌弘、藤原一郎、山口豪、吉丸正樹
特願2011-106960 : 受光装置
藤原聡、小野行徳、西口克彦、高橋庸夫、有田正志、篠原迪人
特願2010-16116 : 抵抗変化型メモリとその制御方法及び製造方法
高橋庸夫、有田正志、藤井孝史、梶宏道、近藤洋史、茂庭昌弘、藤原一郎、山口豪、吉丸正樹
特許5491145 : 単電子ターンスタイルデバイスおよびその製造方法
藤原聡、小野行徳、西口克彦、高橋庸夫、曹民圭、有田正志
特開2011-054766 : 抵抗変化型メモリとその製造方法
高橋庸夫、有田正志、藤井孝史、梶宏道、近藤洋史、茂庭昌弘、藤原一郎、山口豪、吉丸正樹
出願番号 2006121276