MATSUMOTO Masuaki

J-GLOBAL         Last updated: Nov 16, 2019 at 02:41
 
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Name
MATSUMOTO Masuaki
E-mail
masuakiu-gakugei.ac.jp
Affiliation
Tokyo Gakugei University
Section
Faculty of Education, Fundamental Natural Sciences

Research Areas

 
 

Misc

 
Electronic and spin structure of O- and H-adsorbed Fe3O4(111) surfaces
Kanta Asakawa, Yoshio Miura, Naoki Nagatsuka, Kotaro Takeyasu, Masuaki Matsumoto, and Katsuyuki Fukutani
Physical Review B   99 085442-1-085442-7   Feb 2019
Report on Exhibition of Vacuum Experiments at the 2017 Youngsters' Science Festival in Koganei
Journal of the Vacuum Society of Japan   60(12) 514-516   Dec 2017
Development of Lesson Programs for Fostering Science Competency in Teacher Training Program
69 55-90   Sep 2017
Mechanism of gate dielectric degradation by hydrogen migration from the cathode interface
Yusuke Higashi, Riichiro Takaishi, Koichi Kato, Masamichi Suzuki, Yasushi Nakasaki, Mitsuhiro Tomita, Yuichiro Mitani, Masuaki Matsumoto, Shohei Ogura, Katsuyuki Fukutani, Kikuo Yamabe
Microelectronics Reliability   70 12-21   Jan 2017
Mechanism of gate dielectric degradation by hydrogen migration from the cathode interface
Yusuke Higashi, Riichiro Takaishi, Koichi Kato, Masamichi Suzuki, Yasushi Nakasaki, Mitsuhiro Tomita, Yuichiro Mitani, Masuaki Matsumoto, Shohei Ogura, Katsuyuki Fukutani, Kikuo Yamabe
Microelectronics Reliability   70 12-21   2017

Conference Activities & Talks

 
Hydrogen absorption and desorption properties of oxygen-free Pd/Ti thin film as a non-evaporable getter (NEG) coating
The 9th Vacuum and Surface Science Conference of Asia and Australia (VASSCAA9)   Aug 2018   
Result and Problem of the Experimental Training for International Physics Olympiad 2017
Sep 2017   
Experience of Japanese Physics Olympiad Committee in Approaching School Education
7th Congress of World Federation of Physics Competitions (WFPhC) The World Federation of Physics Competitions   Sep 2016   
Dynamical Observation of H-induced Gate Dielectric Degradation through Improved Nuclear Reaction Analysis System
2016 IEEE International Reliability Physics Symposium (IRPS)   Apr 2016   
Study of hydrogen depth distributions by resonant nuclear reaction analysis toward the clarification of the reliability degradation of semiconductor devices
「第15回イオンビームによる表面・界面解析」特別研究会   Dec 2014