2009年12月
Electrochromic properties of InN:Sn films deposited by reactive evaporation
THIN SOLID FILMS
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- ,
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- 巻
- 518
- 号
- 3
- 開始ページ
- 1001
- 終了ページ
- 1005
- 記述言語
- 英語
- 掲載種別
- DOI
- 10.1016/j.tsf.2009.07.174
- 出版者・発行元
- ELSEVIER SCIENCE SA
Indium-tin nitride (InN:Sn) films were deposited by vacuum evaporation assisted by active nitrogen irradiation. A glancing-angle deposition scheme was applied to form isolated nanocolumnar structures in order to expand surface area of the films. X-ray diffraction analysis revealed that the films consisted of crystallites of InN:Sn in a wurtzite structure and amorphous InN:Sn matrix. The doped tin atoms did not work as donor in the InN:Sn films but electrons-trapping sites. The electrochromic amplitude was reduced with increase in tin composition. Despite that the tin doping caused the decrease in carrier density, the color-change region of the InN:Sn films shifted slightly toward shorter wavelength. (C) 2009 Elsevier B.V. All rights reserved.
- リンク情報
- ID情報
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- DOI : 10.1016/j.tsf.2009.07.174
- ISSN : 0040-6090
- Web of Science ID : WOS:000272277200017