MISC

2005年4月

Demonstration of dopant profiling in ultrathin channels of vertical-type double-gate metal-oxide-semiconductor field-effect-transistor by scanning nonlinear dielectric microscopy

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
  • M Masahara
  • ,
  • S Hosokawa
  • ,
  • T Matsukawa
  • ,
  • K Endo
  • ,
  • Y Naitou
  • ,
  • H Tanoue
  • ,
  • E Suzuki

44
4B
開始ページ
2400
終了ページ
2404
記述言語
英語
掲載種別
DOI
10.1143/JJAP.44.2400
出版者・発行元
JAPAN SOC APPLIED PHYSICS

We demonstrate dopant profiling in ultrathin channels (UTCs) (T(c) = 18-58 nm) of vertical-type double-gate metal-oxide-semiconductor field-effect-transistors (DG MOSFET) by scanning nonlinear dielectric microscopy (SNDM). The vertical UTCs were fabricated by orientation-dependent-wet etching. Using ion implantation technology and subsequent furnace annealing, n(+)-p junctions, which correspond to the source/drain of the vertical-type DG MOSFET, were formed in the upper part of the UTC. To improve the accuracy of the vertical dopant profile in the UTC, the cross-section of the UTC was magnified by beveling with a small angle by chemical mechanical polishing. Using such a beveled sample, the dopant depth profile in the vertical UTC has been measured by SNDM with nanometer-scale resolution. On the basis of the measurements of the dopant profile, an effective channel length for the vertical DG MOSFET has also been estimated quantitatively.

Web of Science ® 被引用回数 : 3

リンク情報
DOI
https://doi.org/10.1143/JJAP.44.2400
CiNii Articles
http://ci.nii.ac.jp/naid/150000044814
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000229095700064&DestApp=WOS_CPL
ID情報
  • DOI : 10.1143/JJAP.44.2400
  • ISSN : 0021-4922
  • CiNii Articles ID : 150000044814
  • Web of Science ID : WOS:000229095700064

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