MISC

2005年6月

Work function controllability of metal gates made by interdiffusing metal stacks with low and high work functions

MICROELECTRONIC ENGINEERING
  • T Matsukawa
  • ,
  • YX Liu
  • ,
  • A Masahara
  • ,
  • K Ishii
  • ,
  • K Endo
  • ,
  • H Yamauchi
  • ,
  • E Sugimata
  • ,
  • H Takashima
  • ,
  • T Higashino
  • ,
  • E Suzuki
  • ,
  • S Kanemaru

80
開始ページ
284
終了ページ
287
記述言語
英語
掲載種別
DOI
10.1016/j.mee.2005.04.034
出版者・発行元
ELSEVIER SCIENCE BV

Work function (phi(m)) of metal transistor gates was controlled by using Al-Ni and Ni-Ta alloys made through an interdiffusion process, in which stacks of different metals were annealed. In addition to conventional capacitance-voltage measurements for phi(m) evaluation phi(m) uniformity was also measured microscopically. The average phi(m) of the Al-Ni alloy was successfully changed compared to that of pure Al by interdiffusion at 500 degrees C. The, nonuniformity of Al-Ni, however, was problematic. Though Ni-Ta alloys required interdiffusion at a higher temperature of 700 degrees C, the Ni-Ta alloys had better phi(m) uniformity. Thus, the Ni-Ta alloy is a more suitable candidate for use in metal gates of high-integrity transistors.

Web of Science ® 被引用回数 : 12

リンク情報
DOI
https://doi.org/10.1016/j.mee.2005.04.034
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000231517000064&DestApp=WOS_CPL
ID情報
  • DOI : 10.1016/j.mee.2005.04.034
  • ISSN : 0167-9317
  • Web of Science ID : WOS:000231517000064

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