MISC

2006年4月

Experimental study of effective carrier mobility of multi-fin-type double-gate metal-oxide-semiconductor field-effect transistors with (111) channel surface fabricated by orientation-dependent wet etching

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
  • YX Liu
  • ,
  • E Sugimata
  • ,
  • K Ishii
  • ,
  • M Masahara
  • ,
  • K Endo
  • ,
  • T Matsukawa
  • ,
  • H Yamauchi
  • ,
  • S O'uchi
  • ,
  • E Suzuki

45
4B
開始ページ
3084
終了ページ
3087
記述言語
英語
掲載種別
DOI
10.1143/JJAP.45.3084
出版者・発行元
INST PURE APPLIED PHYSICS

We present an experimental study of effective carrier mobility (mu(eff)) of multi-fin-type double-gate metal-oxide-semiconductor field-effect transistors (FinFETs) with a (111) channel surface fabricated by orientation-dependent Wet etching. The peak values of the obtained mu(eff) of electrons and holes are approximately 300 and 160 cm(2)/(V s), respectively, which are close to those in (111) bulk metal-oxide-semiconductor field-effect transistors (MOSFETs). Moreover, the effective electric field (E-eff) dependence of the mu(eff) of electrons and holes shows a good agreement with the mobility universal curves of (111) bulk MOSFETs. These results indicate that the quality and channel surface roughness of Si-fins by orientation-dependent wet etching are excellent. The obtained results of mu(eff) are very useful for the modeling and design of FinFET-complementary metal-oxide-semiconductor (CMOS) circuits and the developed wet etching technique is very attractive in the fabrication of ultrathin and high-quality Si-fin channels.

Web of Science ® 被引用回数 : 15

リンク情報
DOI
https://doi.org/10.1143/JJAP.45.3084
CiNii Articles
http://ci.nii.ac.jp/naid/150000046852
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000237570600039&DestApp=WOS_CPL
ID情報
  • DOI : 10.1143/JJAP.45.3084
  • ISSN : 0021-4922
  • CiNii Articles ID : 150000046852
  • Web of Science ID : WOS:000237570600039

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