MISC

2005年9月

Demonstration, analysis, and device design considerations for independent DG MOSFETs

IEEE TRANSACTIONS ON ELECTRON DEVICES
  • M Masahara
  • ,
  • YX Liu
  • ,
  • K Sakamoto
  • ,
  • K Endo
  • ,
  • T Matsukawa
  • ,
  • K Ishii
  • ,
  • T Sekigawa
  • ,
  • H Yamauchi
  • ,
  • H Tanoue
  • ,
  • S Kanemaru
  • ,
  • H Koike
  • ,
  • E Suzuki

52
9
開始ページ
2046
終了ページ
2053
記述言語
英語
掲載種別
DOI
10.1109/TED.2005.855063
出版者・発行元
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC

This paper describes a comprehensive. study on the threshold voltage (V-th) controllability of four-terminal-driven double-gate (DG) MOSFETs (4T-XMOSFETs) with independently switched DGs. Two types of 4T-XMOSFETs (fin and vertical) are experimentally demonstrated and their Vth controllability is thoroughly investigated in relation to the initial Vth in the DG-mode based on comprehensible modeling of the devices. Based on the investigation and simulated predictions, device design guidelines for 4T-XMOSFETs are proposed. Decreasing the workfunction of the DGs and increasing the oxide thickness of the second gate (T,,2) are preferable for improving the performance of the 4T-XMOSFET. The optimum workfunction of DGs for attaining low Ioff(stand-by) and high I-on(active) under the limited V-g2 condition is also proposed.

Web of Science ® 被引用回数 : 105

リンク情報
DOI
https://doi.org/10.1109/TED.2005.855063
CiNii Articles
http://ci.nii.ac.jp/naid/10025774568
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000231542100017&DestApp=WOS_CPL
ID情報
  • DOI : 10.1109/TED.2005.855063
  • ISSN : 0018-9383
  • eISSN : 1557-9646
  • CiNii Articles ID : 10025774568
  • Web of Science ID : WOS:000231542100017

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