三谷武志 (Takeshi Mitani) - マイポータル

基本情報

所属: 独立行政法人産業技術総合研究所先進パワーエレクトロニクス研究センターウェハプロセスチーム研究職 (上級主任研究員)

学位: 博士（工学）(筑波大学)

J-GLOBAL ID: 200901049816323956
Researcher ID: M-4004-2018
researchmap会員ID: 5000086884

外部リンク: http://www.aist.go.jp/RESEARCHERDB/cgi-bin/worker_detail.cgi?call=namae&rw_id=T11375738

研究キーワード

研究分野

論文

Synthesis of dense SiC compacts by liquid Si infiltration and their dissolution characteristics in molten Si–Cr alloy

Sakiko Kawanishi, Sota Ikarashi, Takeshi Mitani, Takeshi Yoshikawa, Didier Chaussende, Hiroyuki Shibata

Ceramics International 51(21) 33095-33104 2025年9月
Propagation behaviour of threading screw dislocations during 4H-SiC crystal growth using a hybrid method combined with solution growth and physical vapour transport growth on high-off-angle seeds

Kazuma Eto, Takeshi Mitani, Kenji Momose, Tomohisa Kato

Journal of Crystal Growth 2024年5月
Suppression of SiC Inclusions in 4H-SiC Crystals Grown from Si–Cr–C-Based Solution Saturated with SiC

Takeshi Mitani, Sakiko Kawanishi, Kazuma Eto, Tomohisa Kato, Didier Chaussende, Takeshi Yoshikawa

Crystal Growth & Design 2024年3月20日
Quantification of nitrogen in heavily doped silicon carbide by soft X-ray emission spectroscopy

Kawanishi, S., Mitani, T., Takakura, M., Yoshikawa, T., Shibata, H.

Journal of Crystal Growth 619 2023年
Reduction of threading screw dislocations in 4H-SiC crystals by a hybrid method with solution growth and physical vapor transport growth

Mitani, T., Eto, K., Komatsu, N., Hayashi, Y., Suo, H., Kato, T.

Journal of Crystal Growth 568-569 2021年8月
Massive reduction of threading screw dislocations in 4H-SiC crystals grown by a hybrid method combined with solution growth and physical vapor transport growth on higher off-angle substrates

Takeshi Mitani, Kazuma Eto, Kenji Momose, Tomohisa Kato

Applied Physics Express 14(8) 2021年8月
Erratum: Sign of Hall coefficient in nearest-neighbor hopping conduction in heavily Al-doped p-type 4H-SiC (Japanese Journal of Applied Physics (2020) 59 (051004) DOI: 10.35848/1347-4065/ab8701)

Matsuura, H., Takeshita, A., Hidaka, A., Ji, S., Eto, K., Mitani, T., Kojima, K., Kato, T., Yoshida, S., Okumura, H.

Japanese Journal of Applied Physics 59(8) 2020年8月1日
Anomalous Conduction between the Band and Nearest-Neighbor Hopping Conduction Regions in Heavily Al-Doped p-Type 4H-SiC

Atsuki Hidaka, Akinobu Takeshita, Kohei Ogawa, Tatsuya Imamura, Kota Takano, Kazuya Okuda, Hideharu Matsuura, Shi Yang Ji, Kazuma Eto, Takeshi Mitani …

Materials Science Forum 1004 224-230 2020年7月
Platinum additive impacts on vapor-liquid-solid growth chemical interface for high-quality SiC single crystal films

Takeshi Mitani

Materials Today Chemistry 2020年6月査読有り
Sign of Hall coefficient in nearest-neighbor hopping conduction in heavily Al-doped p-type 4H-SiC

Hideharu Matsuura, Akinobu Takeshita, Atsuki Hidaka, Shiyang Ji, Kazuma Eto, Takeshi Mitani, Kazutoshi Kojima, Tomohisa KATO, Sadafumi Yoshida, Hajime Okumura

Japanese Journal of Applied Physics 2020年4月6日査読有り
Formation of double shockley stacking faults in heavily nitrogen doped 4h-sic crystal with reduction of residual stress around scratch damage

Sugiyama, N., Mitani, T., Kamata, I., Kato, T., Tsuchida, H., Okumura, H.

Materials Science Forum 1004 MSF 2020年
Preface

Yano, H., Ohshima, T., Eto, K., Harada, S., Mitani, T., Tanaka, Y.

Materials Science Forum 1004 MSF 1-1 2020年
Control of temperature distribution to suppress macro-defects in solution growth of 4H-SiC crystals

Yuichiro Hayashi, Takeshi Mitani, Naoyoshi Komatsu, Tomohisa Kato, Hajime Okumura

Journal of Crystal Growth 523 125151-125151 2019年10月査読有り
Application of Defect Conversion Layer by Solution Growth for Reduction of TSDs in 4H-SiC Bulk Crystals by PVT Growth

Takeshi Mitani

Materials Science Forum 2019年7月査読有り
Influence of additives on surface smoothness and polytype stability in solution growth of n-type 4H-SiC

Naoyoshi Komatsu, Takeshi Mitani, Yuichiro Hayashi, Tomohisa Kato, Hajime Okumura

Materials Science Forum 924 55-59 2018年査読有り
Effects of Al addition to Si-based flux on the growth of 4H-SiC films by vapour-liquid-solid pulsed laser deposition

Yamaguchi, R., Osumi, A., Onuma, A., Nakano, K., Maruyama, S., Mitani, T., Kato, T., Okumura, H., Matsumoto, Y.

Crystengcomm 19(35) 2017年査読有り
Modification of the surface morphology of 4H-SiC by addition of Sn and Al in solution growth with SiCr solvents

Komatsu, N., Mitani, T., Hayashi, Y., Kato, T., Harada, S., Ujihara, T., Okumura, H.

Journal of Crystal Growth 458 37-43 2017年査読有り
Morphological stability of 4H-SiC crystals in solution growth on {0001} and {1(1)over-bar0m} surfaces

Mitani, T., Komatsu, N., Hayashi, Y., Kato, T., Okumura, H.

Journal of Crystal Growth 468 883-888 2017年査読有り
Quantitative Analysis of Nanoscale Step Dynamics in High-Temperature Solution-Grown Single Crystal 4H-SiC via In Situ Confocal Laser Scanning Microscope

Onuma, A., Maruyama, S., Komatsu, N., Mitani, T., Kato, T., Okumura, H., Matsumoto, Y.

Crystal Growth & Design 17(5) 2844-2851 2017年査読有り
Raman characterization of damaged layers of 4H-SiC induced by scratching

Nakashima, S., Mitani, T., Tomobe, M., Kato, T., Okumura, H.

Aip Advances 6(1) 2016年査読有り

もっとみる

MISC

超短パルスレーザを用いたSiCウエハの高速ダイシング加工

中島昭, 立石陽介, 村上寛, 高橋秀知, 太田道春, 小杉亮治, 三谷武志, 西澤伸一, 大橋弘通

応用物理学会春季学術講演会講演予稿集(CD-ROM) 61st 2014年
Raman investigation of strain in Si/SiGe heterostructures: Precise determination of the strain-shift coefficient of Si bands

S Nakashima, T Mitani, M Ninomiya, K Matsumoto

JOURNAL OF APPLIED PHYSICS 99(5) 053512-1-053512-6 2006年3月

共同研究・競争的資金等の研究課題

結晶成長界面の制御のキーファクター=ステップ物性：その計測と熱力学モデル構築

日本学術振興会科学研究費助成事業基盤研究(A) 基盤研究(A) 2019年4月 - 2023年3月

吉川健, 川西咲子, 三谷武志, 竹島由里子, 柴田千尋
SiC結晶の液相成長及び物性評価

2004年

三谷武志

基本情報

研究キーワード

研究分野

論文

MISC

共同研究・競争的資金等の研究課題

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