MISC

1996年8月

N-2-plasma-nitridation effects on porous silicon

THIN SOLID FILMS
  • H Yokomichi
  • ,
  • A Masuda
  • ,
  • Y Yonezawa
  • ,
  • T Shimizu

281
1/2
開始ページ
568
終了ページ
571
記述言語
英語
掲載種別
DOI
10.1016/0040-6090(96)08717-2
出版者・発行元
ELSEVIER SCIENCE SA

Both the mechanism and the effects of plasma nitridation of porous silicon (PS) were studied using X-ray photoelectron spectroscopy (XPS), electron spin resonance (ESR) and photoluminescence (PL). The PS layers formed by anodization of (100) and (111) Si wafers were exposed to an rf N-2 plasma. The Si 2p XPS spectra in the as-grown PS exhibited signals due to both Si-Si bonds and Si-O bonds. On the other hand, the signal due to Si-N bonds was observed after nitridation. This fact shows that some of the Si-O bonds were replaced with Si-N bonds after plasma nitridation. it was also found that Pb-like ESR centers increase and the PL intensity decreases with plasma nitridation in the same manner as for light soaking of PS. Plasma nitridation processes for single-crystalline Si and for PS will also be compared.

リンク情報
DOI
https://doi.org/10.1016/0040-6090(96)08717-2
CiNii Articles
http://ci.nii.ac.jp/naid/80009215404
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:A1996VH13800149&DestApp=WOS_CPL
ID情報
  • DOI : 10.1016/0040-6090(96)08717-2
  • ISSN : 0040-6090
  • CiNii Articles ID : 80009215404
  • Web of Science ID : WOS:A1996VH13800149

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