1996年8月
N-2-plasma-nitridation effects on porous silicon
THIN SOLID FILMS
- ,
- ,
- ,
- 巻
- 281
- 号
- 1/2
- 開始ページ
- 568
- 終了ページ
- 571
- 記述言語
- 英語
- 掲載種別
- DOI
- 10.1016/0040-6090(96)08717-2
- 出版者・発行元
- ELSEVIER SCIENCE SA
Both the mechanism and the effects of plasma nitridation of porous silicon (PS) were studied using X-ray photoelectron spectroscopy (XPS), electron spin resonance (ESR) and photoluminescence (PL). The PS layers formed by anodization of (100) and (111) Si wafers were exposed to an rf N-2 plasma. The Si 2p XPS spectra in the as-grown PS exhibited signals due to both Si-Si bonds and Si-O bonds. On the other hand, the signal due to Si-N bonds was observed after nitridation. This fact shows that some of the Si-O bonds were replaced with Si-N bonds after plasma nitridation. it was also found that Pb-like ESR centers increase and the PL intensity decreases with plasma nitridation in the same manner as for light soaking of PS. Plasma nitridation processes for single-crystalline Si and for PS will also be compared.
- リンク情報
- ID情報
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- DOI : 10.1016/0040-6090(96)08717-2
- ISSN : 0040-6090
- CiNii Articles ID : 80009215404
- Web of Science ID : WOS:A1996VH13800149