1997年
Noise reduction of pHEMTs with plasmaless SiN passivation by catalytic CVD
GAAS IC SYMPOSIUM - 19TH ANNUAL, TECHNICAL DIGEST 1997
- ,
- ,
- ,
- ,
- ,
- 開始ページ
- 78
- 終了ページ
- 80
- 記述言語
- 英語
- 掲載種別
- 出版者・発行元
- I E E E
We had improved the catalytic (cat-) CVD technique for damage free passivation on compound semiconductors. The cat-CVD SW passivation successfully reduces the Noise Figure of X-band pHEMTs because Rs and Cgs are reduced due to low deposition damage.
- リンク情報
- ID情報
-
- ISSN : 1064-7775
- Web of Science ID : WOS:A1997BJ80G00018