1999年4月
Low-temperature crystallization of amorphous silicon using atomic hydrogen generated by catalytic reaction on heated tungsten
APPLIED PHYSICS LETTERS
- ,
- ,
- 巻
- 74
- 号
- 15
- 開始ページ
- 2143
- 終了ページ
- 2145
- 記述言語
- 英語
- 掲載種別
- DOI
- 10.1063/1.123782
- 出版者・発行元
- AMER INST PHYSICS
A method for crystallizing amorphous silicon (a-Si) films at low temperatures is proposed. In the method, a-Si films are crystallized at temperatures lower than 400 degrees C by annealing in the presence of atomic hydrogen. The hydrogen atoms are generated by catalytic cracking reaction of H-2 gas on a heated tungsten catalyzer in the catalytic chemical vapor deposition apparatus. It is found that the crystalline fraction of such an a-Si film is increased from 0% to several tens %, and at the same time the a-Si film itself is etched with the rate of several tens nm/min by annealing in atomic hydrogen. This increment of crystalline fraction appears dependent on the quality of initial a-Si films. It is implied that there are several types of a-Si even if the difference among a-Si films cannot be detected by Raman scattering spectroscopy and other means for measurements. (C) 1999 American Institute of Physics. [S0003-6951(99)01415-1].
- リンク情報
- ID情報
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- DOI : 10.1063/1.123782
- ISSN : 0003-6951
- CiNii Articles ID : 120000861421
- Web of Science ID : WOS:000079583000014