2001年7月
RF-MBE growth and Raman scattering characterization of lattice-matched GaInNAs on GaAs(001) substrates
JOURNAL OF CRYSTAL GROWTH
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- 巻
- 227
- 号
- 開始ページ
- 532
- 終了ページ
- 535
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- 出版者・発行元
- ELSEVIER SCIENCE BV
RF-MBE growth of GaInNAs systems on GaAs(0 0 1) substrates and Raman characterizations of the local structures of the grown layers have been investigated. Indium beam irradiation during the GaInNAs growth has a strong influence on the nitrogen incorporation to the grown layers. Raman scattering measurements have revealed that the formation of ordered domains such as (GaN)(GaAs) natural superlattice cluster in the GaInNAs layers is suppressed by the In incorporation.. (C) 2001 Elsevier Science B.V. All rights reserved.
- リンク情報
- ID情報
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- ISSN : 0022-0248
- Web of Science ID : WOS:000169557600103