2005年3月14日
Air-stable n-type carbon nanotube field-effect transistors with Si 3N4 passivation films fabricated by catalytic chemical vapor deposition
Applied Physics Letters
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- 巻
- 86
- 号
- 11
- 開始ページ
- 1
- 終了ページ
- 3
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1063/1.1886898
Air-stable n-type carbon nanotube field-effect transistors (CNTFETs) were fabricated, with Si3N4 passivation films formed by catalytic chemical vapor deposition (Cat-CVD). Electrical measurements reveal that the p-type characteristics of CNTFETs are converted to n-type after fabricating Si3N4 passivation films at 270°C. This indicates that adsorbed oxygen on the CNT sidewalls was removed during the formation process of the Si3N4 passivation films. In addition, the source-drain current of the n-type CNTFETs does not change over time under vacuum, or in air. Consequently, the n-type CNTFETs are completely protected by the Si3N4 passivation film from further effects of ambient gases. Therefore, Cat-CVD is one of the best candidates to fabricate Si3N4 passivation films on CNTFETs. © 2005 American Institute of Physics.
- リンク情報
- ID情報
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- DOI : 10.1063/1.1886898
- ISSN : 0003-6951
- SCOPUS ID : 17944376534