2006年4月
Relation between pin a-Si : H solar-cell perfon-nances and intrinsic-layer properties prepared by Cat-CVD
THIN SOLID FILMS
- 巻
- 501
- 号
- 1-2
- 開始ページ
- 264
- 終了ページ
- 267
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1016/j.tsf.2005.07.251
- 出版者・発行元
- ELSEVIER SCIENCE SA
Relationship between performance of pin a-Si:H solar cells and the properties of intrinsic (i) layer prepared by catalytic chemical vapor deposition (Cat-CVD) was studied in detail. Properties of i-layers obtained at the various deposition parameters were investigated, and solar cells were fabricated by using such i-layers. It was found that the optimum temperature to obtain i-layers for high-efficiency solar cells is higher than that of plasma-enhanced chemical vapor deposition (PECVD) solar cells. Although i-layer was prepared at high temperatures, impurity diffusion from p-layer to Cat-CVD i-layer was suppressed. Performance of solar cells using i-layer prepared at the optimum temperature was nearly equivalent to that of conventional PECVD solar cells, while the stability of Cat-CVD cells appears to be more improved than that of PECVD ones. (c) 2005 Elsevier B.V. All rights reserved.
- リンク情報
-
- DOI
- https://doi.org/10.1016/j.tsf.2005.07.251
- Web of Science
- https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000235979600063&DestApp=WOS_CPL
- URL
- http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=32644440119&origin=inward
- ID情報
-
- DOI : 10.1016/j.tsf.2005.07.251
- ISSN : 0040-6090
- Web of Science ID : WOS:000235979600063