論文

査読有り
2006年4月

Relation between pin a-Si : H solar-cell perfon-nances and intrinsic-layer properties prepared by Cat-CVD

THIN SOLID FILMS
  • T Kitamura
  • K Honda
  • M Nishimura
  • K Sugita
  • K Takemoto
  • Y Yamaguchi
  • Y Toyama
  • T Yamamoto
  • S Miyazaki
  • M Eguchi
  • T Harano
  • T Sugano
  • N Yoshida
  • A Masuda
  • T Itoh
  • T Toyama
  • S Nonomura
  • H Okamoto
  • H Matsumura
  • 全て表示

501
1-2
開始ページ
264
終了ページ
267
記述言語
英語
掲載種別
研究論文(学術雑誌)
DOI
10.1016/j.tsf.2005.07.251
出版者・発行元
ELSEVIER SCIENCE SA

Relationship between performance of pin a-Si:H solar cells and the properties of intrinsic (i) layer prepared by catalytic chemical vapor deposition (Cat-CVD) was studied in detail. Properties of i-layers obtained at the various deposition parameters were investigated, and solar cells were fabricated by using such i-layers. It was found that the optimum temperature to obtain i-layers for high-efficiency solar cells is higher than that of plasma-enhanced chemical vapor deposition (PECVD) solar cells. Although i-layer was prepared at high temperatures, impurity diffusion from p-layer to Cat-CVD i-layer was suppressed. Performance of solar cells using i-layer prepared at the optimum temperature was nearly equivalent to that of conventional PECVD solar cells, while the stability of Cat-CVD cells appears to be more improved than that of PECVD ones. (c) 2005 Elsevier B.V. All rights reserved.

リンク情報
DOI
https://doi.org/10.1016/j.tsf.2005.07.251
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000235979600063&DestApp=WOS_CPL
URL
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=32644440119&origin=inward
ID情報
  • DOI : 10.1016/j.tsf.2005.07.251
  • ISSN : 0040-6090
  • Web of Science ID : WOS:000235979600063

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