小杉亮治 (Ryouji Kosugi) - マイポータル - researchmap

基本情報

所属: 独立行政法人産業技術総合研究所先進パワーエレクトロニクス研究センター SiCパワーデバイスチーム

J-GLOBAL ID: 200901029091248421
researchmap会員ID: 5000086980

外部リンク: http://www.aist.go.jp/RESEARCHERDB/cgi-bin/worker_detail.cgi?call=namae&rw_id=R31126214

MISC

19

Diluted nitric oxide (NO) annealing of SiO2/4H-SiC in cold-wall oxidation furnace

Materials Science Forum 457-460 1345-1348 2004年
Fabrication of double implanted (0001) 4H-SiC MOSFETs by using pyrogenic re-oxidation annealing

Materials Science Forum 457-460,1397-1400 2004年
Thermal oxidation of (0001) 4H-SiC at high temperatures in ozone-admixed oxygen gas ambient

R Kosugi, K Fukuda, K Arai

APPLIED PHYSICS LETTERS 83(5) 884-886 2003年8月
Reduction of Interface Trapped Density of SiO2/4H-SiC by Oxidation of Atomic Oxygen

MATERIALS SCIENCE FORUM 433 563-566 2003年
Silicon carbide epitaxial layer growths on Acheson seed crystals from silicon melt

MN Khan, S Nishizawa, T Kato, R Kosugi, K Arai

MATERIALS LETTERS 57(2) 307-314 2002年12月
Correlation between channel mobility and shallow interface traps in SiC metal-oxide-semiconductor field-effect transistors

S Suzuki, S Harada, R Kosugi, J Senzaki, W Cho, K Fukuda

JOURNAL OF APPLIED PHYSICS 92(10) 6230-6234 2002年11月
Strong dependence of the inversion mobility of 4H and 6H SiC(0001) MOSFETs on the water content in pyrogenic re-oxidation annealing

R Kosugi, S Suzuki, M Okamoto, S Harada, J Senzaki, K Fukuda

IEEE ELECTRON DEVICE LETTERS 23(3) 136-138 2002年3月
Relationship between channel mobility and interface state density in SiC metal-oxide-semiconductor field-effect transistor

S Harada, R Kosugi, J Senzaki, WJ Cho, K Fukuda, K Arai, S Suzuki

JOURNAL OF APPLIED PHYSICS 91(3) 1568-1571 2002年2月
High-temperature post-oxidation annealing on the low-temperature oxide/4H-SiC(0001)

R Kosugi, WJ Cho, K Fukuda, K Arai, S Suzuki

JOURNAL OF APPLIED PHYSICS 91(3) 1314-1317 2002年2月
ESR Characterization of SiC Bulk Crystals and SiO2/SiC Interface

MATERIALS SCIENCE FORUM 389 1025- 2002年
Improvements of electrical properties for n-type-implanted 4H-SiC substrates using high-temperature rapid thermal annealing process

MATERIALS SCIENCE FORUM 389 795-798 2002年
Significant Improvement of Inversion Channel Mobility in 4H-SiC MOSFET on (11-20) Face using Hydrogen Post Oxidation Annealing

MATERIALS SCIENCE FORUM 389 1061-1064 2002年
Characterization of the interfaces between SiC and oxide films by spectroscopic ellipsometry

Y. Tomioka, T. Iida, M. Midorikawa, H. Tukada, K. Yoshimoto, Y. Hijikata, H. Yaguchi, M. Yoshikawa, Y. Ishida, R. Kosugi …

Materials Science Forum 389-393 1029-1032 2002年
Improved Channel Mobility in Normally-off 4H-SiC MOSFETs with Buried Channel Structure

MATERIALS SCIENCE FORUM 2002年
Influence of the wet re-oxidation procedure on inversion mobility of 4H-SiC MOSFETs

MATERIAL SCIENCE FORUM 389 1049-1052 2002年
A large reduction in interface-state density for MOS capacitor on 4H-SiC (11(2)over-bar0) face using H-2 and H2O vapor atmosphere post-oxidation annealing

K Fukuda, J Senzaki, M Kushibe, K Kojima, R Kosugi, S Suzuki, S Harada, T Suzuki, T Tanaka, K Arai

SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS 389-3 1057-1060 2002年
Excellent effects of hydrogen postoxidation annealing on inversion channel mobility of 4H-SiC MOSFET fabricated on (11 2̄ 0) face

Junji Senzaki, Kazutoshi Kojima, Shinsuke Harada, Ryoji Kosugi, Seiji Suzuki, Takaya Suzuki, Kenji Fukuda

IEEE Electron Device Letters 23(1) 13-15 2002年1月
High channel mobility in normally-off 4H-SiC buried channel MOSFETs

S Harada, S Suzuki, J Senzaki, R Kosugi, K Adachi, K Fukuda, K Arai

IEEE ELECTRON DEVICE LETTERS 22(6) 272-274 2001年6月
Effects of pyrogenic reoxidation annealing on inversion channel mobility of 4H-SiC metal-oxide-semiconductor field-effect transistor fabricated on (11-20) face

SENZAKI J, KOJIMA K, HARADA S, KOSUGI R, SUZUKI S, SUZUKI T, FUKUDA K

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 40(11B) L1201-L1203 2001年