太田裕之 (Hiroyuki Ota) - マイポータル

基本情報

所属: 独立行政法人産業技術総合研究所ナノ電子デバイス研究センター極限構造トランジスタ研究チーム

J-GLOBAL ID: 200901032808825187
researchmap会員ID: 5000086982

外部リンク: http://www.aist.go.jp/RESEARCHERDB/cgi-bin/worker_detail.cgi?call=namae&rw_id=H46142537

研究分野

ものづくり技術（機械・電気電子・化学工学） / 電子デバイス、電子機器 /

MISC

Symmetrical threshold voltage in complementary metal-oxide-semiconductor field-effect transistors with HfAlOx(N) achieved by adjusting Hf/Al compositional ratio

M Kadoshima, A Ogawa, H Ota, K Iwamoto, M Takahashi, N Mise, S Migita, M Ikeda, H Satake, T Nabatame …

JOURNAL OF APPLIED PHYSICS 99(5) 054506-1-054506-6 2006年3月
Carrier separation analysis for clarifying carrier conduction and degradation mechanisms in high-k stack gate dielectrics

W Mizubayashi, N Yasuda, K Okada, H Ota, H Hisamatsu, K Iwamoto, K Tominaga, K Yamamoto, T Horikawa, T Nabatame …

MICROELECTRONICS RELIABILITY 45(7-8) 1041-1050 2005年7月
Advantages of HfAlON gate dielectric film for advanced low power CMOS application

A Toriumi, K Iwamoto, H Ota, M Kadoshima, W Mizubayashi, T Nabatame, A Ogawa, K Tominaga, T Horikawa, H Satake

MICROELECTRONIC ENGINEERING 80 190-197 2005年6月
Study on oxynitride buffer layers in HfO2 metal-insulator-semiconductor structures for improving metal-insulator-semiconductor field-effect transistor performance

H Ota, N Yasuda, T Yasuda, Y Morita, N Miyata, K Tominaga, M Kadoshima, S Migita, T Nabatame, A Toriumi

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 44(4A) 1698-1703 2005年4月
Correlation between scanning-probe-induced spots and fixed positive charges in thin HfO2 films

N Miyata, H Ota, M Ichikawa

APPLIED PHYSICS LETTERS 86(11) 112906-1-112906-3 2005年3月
キャリア分離法を用いたhigh-k stackゲート絶縁膜のキャリア伝導及び絶縁性劣化機構の解析

電気学会研究会論文 19-24 2005年
Roles of Predominant and Subordinate Carriers in the Breakdown Mechanism Studied with HfAlOx/SiO2 Stacked Gate Dielectrics

ECS Transactions: Physics and Chemistry of SiO2 and the Si-SiO2 Interface - 5 1(1) 179-189 2005年
Weak Temperature Dependence of Non-Coulomb Scattering Component of HfAlOx-Limited Inversion Layer Mobility in n+poly-Si/HfAlOx/SiO2 n-MOSFETs

JAPANESE JOURNAL OF APPLIED PHYSICS 44(11) 7750-7755 2005年
Degradation Mechanism of HfAlOx/SiO2 Stacked Gate Dielectrics Studied Through Transient and Steady State Leakage Current Analysis

JOURNAL OF APPLIED PHYSICS 97(4) 074505-1-074505-7 2005年
Roles of nitrogen incorporation in HfAlOx(N) gate dielectrics for suppression of boron penetration

T Nabatame, K Iwamoto, K Yamamoto, K Tominaga, H Hisamatsu, M Ohno, K Akiyama, M Ikeda, T Nishimura, H Ota …

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 22(4) 2128-2131 2004年7月
Effect of the interface layer SiO2 thickness on the dominant carrier type in the leakage currents for HfAlOX/SiO2 gate dielectric films

MIZUBAYASHI W, YASUDA N, HISAMATSU H, IWAMOTO K, TOMINAGA K, YAMAMOTO K, OTA H, HORIKAWA T, TORIUMI A

APPLIED PHYSICS LETTERS 85(25) 6227-6229 2004年
Fabrication and electrical properties of ferroelectric-gate FETS with epitaxial gate structures

S Migita, K Sakamaki, SB Xiong, H Ota, Y Tarui, S Sakai

ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS 87(1) 24-33 2004年
Memory properties of a ferroelectric gate field-effect transistor with an adjoining metal-ferroelectric-metal assistance cell

SB Xiong, S Sakai, K Ishii, S Migita, K Sakamaki, H Ota, E Suzuki

JOURNAL OF APPLIED PHYSICS 94(4) 2559-2562 2003年8月
エピタキシャルゲート構造を有する強誘電体ゲートFETの試作と電気特性

電子情報通信学会論文誌 C J85-C(1) 14-22 2002年
Fabrication and electrical characteristics of a trench-type metal-ferroelectric-metal-insulator-semiconductor field effect transistor

K Sakamaki, S Migita, SB Xiong, H Ota, S Sakai, Y Tarui

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 40(9B) 5605-5609 2001年9月
Fabrication and critical currents of thin-film-type Bi2Sr2CaCu2Ox intrinsic Josephson junctions

H Fujino, Y Kasai, H Ota, S Migita, H Yamamori, K Matsumoto, S Sakai

PHYSICA C 362 256-260 2001年9月
All-perovskite-oxide ferroelectric memory transistor composed of Bi2Sr2CuOx and PbZr0.5Ti0.5O3 films

H Ota, H Fujino, S Migita, SB Xiong, S Sakai

JOURNAL OF APPLIED PHYSICS 89(12) 8153-8158 2001年6月
Epitaxial structure SrBi2Ta2O9 < 116 >/SrTiO3 < 011 > /Ce0.12Zr0.88O2 < 001 > /Si < 001 > for ferroelectric-gate FET memory

S Migita, K Sakamaki, H Ota, SB Xiong, Y Tarui, S Sakai

INTEGRATED FERROELECTRICS 40(1-5) 135-143 2001年