2006年
Improving photo-switching property of organic photo-FET having photosensitive gate dielectric
ORGANIC FIELD-EFFECT TRANSISTORS V
- ,
- ,
- ,
- ,
- ,
- ,
- ,
- 巻
- 6336
- 号
- 開始ページ
- 63361E-
- 終了ページ
- 記述言語
- 英語
- 掲載種別
- DOI
- 10.1117/12.678929
- 出版者・発行元
- SPIE-INT SOC OPTICAL ENGINEERING
We fabricated a novel type photo-FET using poly(N-vinylcarbazole) (PVK) as a photosensitive gate dielectric. For the photo-FET, photo-illumination to the PVK insulator layer makes the field-effect mobility mu(FET) two orders of magnitude higher than dark condition. In particular, under blue-light illumination condition the on-off ratio was also a few ten times higher than dark condition. Furthermore, by introducing blocking layer between semiconductor layer and insulator layer lead. We concluded that the improvement of the transistor properties resulted from effective charge accumulation at the conductive channel by photo illuminations.
- リンク情報
- ID情報
-
- DOI : 10.1117/12.678929
- ISSN : 0277-786X
- eISSN : 1996-756X
- Web of Science ID : WOS:000243028900022