石田夕起 (Yuuki Ishida) - マイポータル - researchmap

基本情報

所属: 独立行政法人産業技術総合研究所先進パワーエレクトロニクス研究センターウェハプロセスチーム

J-GLOBAL ID: 200901029459523592
researchmap会員ID: 5000087394

外部リンク: http://www.aist.go.jp/RESEARCHERDB/cgi-bin/worker_detail.cgi?call=namae&rw_id=Y29342748

MISC

25

4H-SiC Carbon-Face Epiaxial Layers Grown by Low-Pressure Hot-Wall Chemical Vapor Deposition

Materials Science Forum 457-460 209-212 2004年
Investigation of antiphase domain annihilation mechanism in 3C-SiC on Si substrates

Y Ishida, T Takahashi, H Okumura, S Yoshida

JOURNAL OF APPLIED PHYSICS 94(7) 4676-4689 2003年10月
Uniformity of 4H-SiC epitaxial layers grown on 3-in diameter substrates

J Nishio, M Hasegawa, K Kojima, T Ohno, Y Ishida, T Takahashi, T Suzuki, T Tanaka, K Arai

JOURNAL OF CRYSTAL GROWTH 258(1-2) 113-122 2003年10月
N-channel MOSFETs fabricated on homoepitaxy-grown 3C-SiC films

KK Lee, Y Ishida, T Ohshima, K Kojima, Y Tanaka, T Takahashi, H Okumura, K Arai, T Kamiya

IEEE ELECTRON DEVICE LETTERS 24(7) 466-468 2003年7月
The electrical characteristics of metal-oxide-semiconductor field effect transistors fabricated on cubic silicon carbide

T Ohshima, KK Lee, Y Ishida, K Kojima, Y Tanaka, T Takahashi, M Yoshikawa, H Okumura, K Arai, T Kamiya

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS 42(6B) L625-L627 2003年6月
炭化ケイ素基板上に成長させた1200。Cドライ酸化膜中の界面欠陥の電気特性とその熱アニーリング効果

電子情報通信学会論文誌 J86-C(4) 426-433 2003年
Influence of stacking faults on the performance of 4H-SiC Schottky barrier diodes fabricated on (11(2)over-bar0) face

K Kojima, T Ohno, T Fujimoto, M Katsuno, N Ohtani, J Nishio, T Suzuki, T Tanaka, Y Ishida, T Takahashi …

APPLIED PHYSICS LETTERS 81(16) 2974-2976 2002年10月
Epitaxial Growth of (11-20)4H-SiC Using Substrate Growth in the [11-20]Direction

MATERIALS SCIENCE FORUM 389-393 195-198 2002年
Replication of Defects from 4H-SiC Wafer to Epitaxial Layer

MATERIAL SCIENCE FORUM 389-393 447-450 2002年
High-Rate Epitaxial Growth of 4H-SiC using a Vertical-Type,Quasi-Hot-Wall CVD Reactor

MATERIALS SCIENCE FORUM 389-393 179-182 2002年
Investigation of Residual Impurities in 4H-SiC Epitaxial Layers Grown by Hot-Wall Chemical Vapor Depositon

MATERIALS SCIENCE FORUM 389-393 215-218 2002年
Influence of the Crystalline Quality of Epitaxial Layer on the Inversion Channel Mobility in 4H-SiC MOSFETS

MATERIAL SCIENCE FORUM 389-393 1053-1056 2002年
Sensitive Detection of Defects in αandβ SiC by Raman Scattering

MATERIAL SCIENCE FORUM 389-393 629-632 2002年
The Investigations of 4H-SiC/SiO2 interfaces by optical and electrical measurments

MATERIAL SCIENCE FORUM 389-393 459-462 2002年
Simulation of High-Temperature SiC Epitaxial Growth Using Vertical, Quasi-Hot-Wall CVD Reactor

MATERIAL SCIENCE FORUM 389-393 227-230 2002年
Characterization of the interfaces between SiC and oxide films by spectroscopic ellipsometry

Y. Tomioka, T. Iida, M. Midorikawa, H. Tukada, K. Yoshimoto, Y. Hijikata, H. Yaguchi, M. Yoshikawa, Y. Ishida, R. Kosugi …

Materials Science Forum 389-393 1029-1032 2002年
3C-SiC(100) Homoepitaxial Growth by Chemical Vapor Deposition and Schottky Barrier Junchtion Characteristics

MATERIAL SCIENCE FORUM 389-393 275-278 2002年
Investigation of the Relationship between Defects and Electrical Properties of 3C-SiC epilayers

MATERIAL SCIENCE FORUM 389-393 459-462 2002年
Comparative Study of heteroepitaxially and homoepitaxially Grown 3C-SiC Films

MATERIAL SCIENCE FORUM 389-393 323-326 2002年
Localized exciton dynamics in strained cubic In0.1Ga0.9N/GaN multiple quantum wells

S. F. Chichibu, M. Sugiyama, T. Onuma, T. Kitamura, H. Nakanishi, T. Kuroda, A. Tackeuchi, T. Sota, Y. Ishida, H. Okumura

Applied Physics Letters 79(26) 4319-4321 2001年12月24日

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