MISC

2003年2月

A quadrupole ion trap as low-energy cluster ion beam source

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
  • N Uchida
  • ,
  • L Bolotov
  • ,
  • T Kanayama

42
2A
開始ページ
707
終了ページ
712
記述言語
英語
掲載種別
DOI
10.1143/JJAP.42.707
出版者・発行元
JAPAN SOC APPLIED PHYSICS

Kinetic energy distribution of ion beams was measured by a retarding field energy analyzer for a mass-selective cluster ion beam deposition system that uses a quadrupole ion trap as a cluster ion beam source. The results indicated that the system delivers a cluster-ion beam with energy distribution of similar to2 eV, which corresponded well to the calculation results of the trapping potentials in the ion trap. Using this deposition system, mass-selected hydrogenated Si cluster ions SinHx+ were actually deposited on Si(111)-(7 x 7) surfaces at impact kinetic energy E-d of 3-30 eV. Observation by using a scanning tunneling microscope (STM) demonstrated that Si6Hx+ cluster ions landed on the surface without decomposition at E-d = 3 eV, while the deposition was destructive at Ed greater than or equal to 18 eV.

Web of Science ® 被引用回数 : 5

リンク情報
DOI
https://doi.org/10.1143/JJAP.42.707
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000181805200072&DestApp=WOS_CPL