- JAPAN SOC APPLIED PHYSICS
Kinetic energy distribution of ion beams was measured by a retarding field energy analyzer for a mass-selective cluster ion beam deposition system that uses a quadrupole ion trap as a cluster ion beam source. The results indicated that the system delivers a cluster-ion beam with energy distribution of similar to2 eV, which corresponded well to the calculation results of the trapping potentials in the ion trap. Using this deposition system, mass-selected hydrogenated Si cluster ions SinHx+ were actually deposited on Si(111)-(7 x 7) surfaces at impact kinetic energy E-d of 3-30 eV. Observation by using a scanning tunneling microscope (STM) demonstrated that Si6Hx+ cluster ions landed on the surface without decomposition at E-d = 3 eV, while the deposition was destructive at Ed greater than or equal to 18 eV.
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