MISC

2006年1月

Scanning tunneling microscopy detection of individual dopant atoms on wet-prepared Si(111): H surfaces

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
  • M Nishizawa
  • ,
  • L Bolotov
  • ,
  • T Tada
  • ,
  • T Kanayama

24
1
開始ページ
365
終了ページ
369
記述言語
英語
掲載種別
DOI
10.1116/1.2162564
出版者・発行元
A V S AMER INST PHYSICS

We have performed scanning tunneling microscopy (STM) observation of individual acceptor and donor atoms on hydrogen-terminated Si(111)- 1 x 1 surfaces prepared by wet etching in a NH4F aqueous solution. Separate measurements of p- and n-type substrates showed that acceptors appear as protrusions in filled-state images and as depressions in empty-state images, while for donors the topography is reversed in both filled- and empty-state images. The same relation between the bias polarity and the dopant appearance is preserved for codoped substrates. These results demonstrate that the STM on the Si(111):H surface can detect acceptors and donors distinguishably, enabling us to measure dopant profiles across codoped areas such as p-n junctions. (c) 2006 American Vacuum Society.

Web of Science ® 被引用回数 : 16

リンク情報
DOI
https://doi.org/10.1116/1.2162564
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000235845900068&DestApp=WOS_CPL