MISC

2005年9月

Scanning resonant tunneling spectroscopy of fullerene molecules on Si surfaces for carrier density profiling across p-n junctions

APPLIED PHYSICS LETTERS
  • L Bolotov
  • ,
  • T Okui
  • ,
  • T Kanayama

87
13
開始ページ
133107
終了ページ
133109
記述言語
英語
掲載種別
DOI
10.1063/1.2058221
出版者・発行元
AMER INST PHYSICS

Scanning tunneling microscopy and spectroscopy were used to investigate a variation of resonant electron tunneling peaks of C-60 molecules placed on oxidized Si(100) surfaces that had different impurity profiles. C-60-derived resonance peak energy systematically varied depending on the position in the depletion region of lateral Si p-n junctions, indicating that the peak energy can be used for carrier density profiling. The peak energy was determined for uniformly doped substrates with a wide range of phosphorus and boron concentrations. The results were supported by a simple calculation of a one-dimensional tunnel diode. (C) 2005 American Institute of Physics.

Web of Science ® 被引用回数 : 6

リンク情報
DOI
https://doi.org/10.1063/1.2058221
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000232060200045&DestApp=WOS_CPL