- AMER INST PHYSICS
Scanning tunneling microscopy and spectroscopy were used to investigate a variation of resonant electron tunneling peaks of C-60 molecules placed on oxidized Si(100) surfaces that had different impurity profiles. C-60-derived resonance peak energy systematically varied depending on the position in the depletion region of lateral Si p-n junctions, indicating that the peak energy can be used for carrier density profiling. The peak energy was determined for uniformly doped substrates with a wide range of phosphorus and boron concentrations. The results were supported by a simple calculation of a one-dimensional tunnel diode. (C) 2005 American Institute of Physics.
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