2011年3月26日
Electrostatic potential fluctuations on oxide-passivated si(111) surfaces measured using integrated scanning probe microscopy
e-Journal of Surface Science and Nanotechnology
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- 巻
- 9
- 号
- 開始ページ
- 117
- 終了ページ
- 121
- 記述言語
- 英語
- 掲載種別
- 研究論文(国際会議プロシーディングス)
- DOI
- 10.1380/ejssnt.2011.117
Variations of the electrostatic potential were investigated for oxide-passivated n-Si(111) surfaces with atomically flat terraces by measuring the force acting on an ultra-sharp tungsten probe that was attached to the quartz resonator of an atomic force microscope. When the probe-sample gap maintained a constant tunneling current, an enhancement of electrostatic force with a lateral extent of ̃5 nm was observed around underlying donor atoms and charged defects. Additional variations of the surface potential and the probe-sample capacitance across the surface steps were associated with excess electric charge at the step edge. © 2011 The Surface Science Society of Japan.
- リンク情報
- ID情報
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- DOI : 10.1380/ejssnt.2011.117
- ISSN : 1348-0391
- ORCIDのPut Code : 20800872
- SCOPUS ID : 79954453424