荒井和雄 (Kazuo Arai) - マイポータル

基本情報

所属: 独立行政法人産業技術総合研究所イノベーション推進企画部

J-GLOBAL ID: 200901045289112768
researchmap会員ID: 5000087560

外部リンク: http://www.aist.go.jp/RESEARCHERDB/cgi-bin/worker_detail.cgi?call=namae&rw_id=K12764357

MISC

700-V 1.0-m Omega center dot cm(2) buried gate SiC-SIT (SiC-BGSIT)

Yasunori Tanaka, Mitsuo Okamoto, Akio Takatsuka, Kazuo Arai, Tsutomu Yatsuo, Koji Yano, Masanobu Kasuga

IEEE ELECTRON DEVICE LETTERS 27(11) 908-910 2006年11月
Homoepitaxial growth on a 4H-SiC C-face substrate

Kazutoshi Kojima, Satoshi Kuroda, Hajime Okumura, Kazuo Arai

CHEMICAL VAPOR DEPOSITION 12(8-9) 489-494 2006年8月
In-situ observation of SiC bulk single crystal growth by XRD system

T Kato, S Nishizawa, H Yamaguchi, K Arai

JOURNAL OF RARE EARTHS 24(2) 49-53 2006年3月
Investigation of in-grown dislocations in 4H-SiC epitaxial layer

MATERIALS SCIENCE FORUM 527-529 147-152 2006年
Estimation of Converters with SiC Devices for Distribution Networks

KONDOH Junji, YATSUO Tsutomu, ISHII Itaru, ARAI Kazuo

電気学会論文誌Ｄ産業応用部門誌 126(4) 480-488 2006年
Nitrogen incorporation characteristics on a 4H-SiC epitaxial layer

K Kojima, S Kuroda, H Okumura, K Arai

APPLIED PHYSICS LETTERS 88(2) 021907-1-021907-3 2006年1月
Influence of lattice polarity of nitrogen and aluminum doping on 4H-SiC epitaxial layer

K Kojima, S Kuroda, H Okumura, K Arai

MICROELECTRONIC ENGINEERING 83(1) 79-81 2006年1月
Effect of growth condition on micropipe filling of 4H-SiC epitaxial layer

K. Kojima, S. Nishizawa, S. Kuroda, H. Okumura, K. Arai

JOURNAL OF CRYSTAL GROWTH 275(1-2) E549-E554 2005年2月
Modeling of SiC-CVDon Si-face/C-face in a horizontal hot-wall reactor

Shin-ichi Nishizawa, Kazutoshi Kojima, Satoshi Kuroda, Kazuo Arai, Michel Pons

JOURNAL OF CRYSTAL GROWTH 275(1-2) E515-E520 2005年2月
Defect Characterization of 4H-SiC Bulk Crystals Grown on Micropipe Filled Seed Crystal

MATERIALS SCIENCE FORUM 483-485 315-318 2005年
Analysis of Low On-Resistance in 4H-SiC Double-Epitaxial MOSFET

MATERIALS SCIENCE FORUM 483-485 813-816 2005年
2-inch 4H-SiC homoepitaxial layer grown on on-axis C-face substrate by CVD method

MATERIALS SCIENCE FORUM 483-485 93-96 2005年
Influence of growth conditions on basal plane dislocation in 4H-SiC epitaxial layer

T Ohno, H Yamaguchi, S Kuroda, K Kojima, T Suzuki, K Arai

JOURNAL OF CRYSTAL GROWTH 271(1-2) 1-7 2004年10月
Homoepitaxial growth of 4H-SiC on on-axis (0001(-)) C-face substrates by chemical vapor depositon

K Kojima, H Okumura, S Kuroda, K Arai

JOURNAL OF CRYSTAL GROWTH 269(2-4) 367-376 2004年9月
Impact ionization coefficients of 4H silicon carbide

T Hatakeyama, T Watanabe, T Shinohe, K Kojima, K Arai, N Sano

APPLIED PHYSICS LETTERS 85(8) 1380-1382 2004年8月
8.5mΩcm2 600V Double-Epitaxial MOSFETs in 4H-SiC

IEEE ELECTRON DEVICE LETTERS 25(5) 292-294 2004年5月
Reverse characteristics of pn diodes on 4H-SiC(000-1) C and (11-20) face

Y Tanaka, K Fukuda, K Arai, K Kojima, T Suzuki, T Yatsuo

APPLIED PHYSICS LETTERS 84(10) 1774-1776 2004年3月
Direct observation of dislocations propagated from 4H-SiC substrate to epitaxial layer by X-ray topography

T Ohno, H Yamaguchi, S Kuroda, K Kojima, T Suzuki, K Arai

JOURNAL OF CRYSTAL GROWTH 260(1-2) 209-216 2004年1月
4H-SiC Carbon-Face Epiaxial Layers Grown by Low-Pressure Hot-Wall Chemical Vapor Deposition

Materials Science Forum 457-460 209-212 2004年
Fabrication of 4H-SiC Double-Epitaxial MOSFETs

Materials Science Forum 457-460 1421-1424 2004年

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