Kulandaivel Jeganathan (Kulandaivel Jeganathan) - マイポータル - researchmap

基本情報

所属: 独立行政法人産業技術総合研究所パワーエレクトロニクス研究センターデバイスプロセスチーム２

J-GLOBAL ID: 200901065520972334
researchmap会員ID: 5000087589

外部リンク: http://www.aist.go.jp/RESEARCHERDB/cgi-bin/worker_detail.cgi?call=namae&rw_id=K41741140

MISC

14

Dynamically stable gallium-induced 3x3-SiC (0001) surface for two-dimensional GaN nucleation by molecular-beam epitaxy

K Jeganathan, M Shimizu, H Okumura

JOURNAL OF APPLIED PHYSICS 95(7) 3761-3764 2004年4月
The effect of gallium adsorbate on SiC(0001) surface for GaN by MBE

K Jeganathan, M Shimizu, T Ide, H Okumura

PHYSICA STATUS SOLIDI B-BASIC RESEARCH 240(2) 326-329 2003年11月
Two-dimensional electron gases induced by polarization charges in AlN/GaN heterostructure grown by plasma-assisted molecular-beam epitaxy

K Jeganathan, T Ide, M Shimizu, H Okumura

JOURNAL OF APPLIED PHYSICS 94(5) 3260-3263 2003年9月
Initial stage of GaN nucleation on root 3 x root 3 R30 degrees-Ga reconstructed 4H-SiC(0001)(Si) by molecular-beam epitaxy

K Jeganathan, M Shimuzu, H Okumura, F Hirose, S Nishizawa

SURFACE SCIENCE 527(1-3) L197-L202 2003年3月
Strain relaxation correlated with the transport properties of AlN/GaN heterostructure grown by plasma-assisted molecular-beam epitaxy

K Jeganathan, T Ide, M Shimizu, H Okumura

JOURNAL OF APPLIED PHYSICS 93(4) 2047-2050 2003年2月
Surface morphology of GaN layer grown by plasma-assisted molecular beam epitaxy on MOCVD-grown GaN template

T Ide, M Shimizu, J Kuo, K Jeganathan, XQ Shen, H Okumura

5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS (7) 2549-2552 2003年
GaN初期成長におけるSi-ドーピング, GaNテンプレートの効果

日本結晶学会誌 30(2) 24-30 2003年
Control of GaN surface morphologies grown on 6H-SiC (0001) using plasma-assisted molecular beam epitaxy

K Jeganathan, M Shimuzu, T Ide, H Okumura

JOURNAL OF CRYSTAL GROWTH 244(1) 33-38 2002年9月
Improvement of DC characteristics in AlGaN/GaN heterojunction field-effect transistors employing AlN spacer layer

T Ide, M Shimizu, S Hara, DH Cho, K Jeganathan, XQ Shen, H Okumura, T Nemoto

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 41(9) 5563-5564 2002年9月
High-Quality GaN Layers on c-Plane Sapphire Substrates by Plasma-Assisted Molecular-Beam Epitaxy Using Double-Step AlN Bu ･er Process

Jpn.J.Appl.Phys 41(7A) 4454-4457 2002年7月
High-quality growth of AlN epitaxial layer by plasma-assisted molecular-beam epitaxy

K Jeganathan, T Kitamura, M Shimizu, H Okumura

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS 41(1AB) L28-L30 2002年1月
Growth of Strain Free GaN Layers on 6H-SiC (0001) by Plasma-Assisted Molecular Beam epitaxy

Physica status solidi C (1) 143-147 2002年
Improvement of film quality using Si-doping in AlGaN/GaN heterostructure grown by plasma-assisted molecular beam epitaxy

IDE T, SHIMIZU M, SHEN X Q, JEGANATHAN K, OKUMURA H, NEMOTO T

JAPANESE JOURNAL OF APPLIED PHYSICS 245(1/2) 15-20 2002年
2DEG characteristics of AlN/GaN heterointerface on sapphire substrates grown by plasma-assisted MBE

K Jeganathan, T Ide, SXQ Shen, M Shimizu, H Okumura

PHYSICA STATUS SOLIDI B-BASIC RESEARCH 228(2) 613-616 2001年11月