沈 旭強

Generation of cubic phase in molecular-beam-epitaxy-grown hexagonal InGaN epilayers on InN 

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 45(1 A) 57-60 2006年1月10日  

Studies of the annihilation mechanism of threading dislocation in AlN films grown on vicinal sapphire (0001) substrates using transmission electron microscopy 

APPLIED PHYSICS LETTERS 87(10) 101910-1-101910-3 2005年9月  

Characterizations of GaN films and GaN/AlN super-lattice structures grown on vicinal sapphire (0001) substrates by RF-MBE 

JOURNAL OF CRYSTAL GROWTH 278(1-4) 378-382 2005年5月  

Reduction of the threading dislocation density in GaN films grown on vicinal sapphire(0001) substrates 

APPLIED PHYSICS LETTERS 86(2) 021912-1-021912-3 2005年1月  

Impact of vicinal sapphire (0001) substrates on the high-quality AIN films by plasma-assisted molecular beam epitaxy 

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS 42(11A) L1293-L1295 2003年11月  

Termination mechanism of inversion domains by stacking faults in GaN 

JOURNAL OF APPLIED PHYSICS 93(6) 3264-3269 2003年3月  

Surface morphology of GaN layer grown by plasma-assisted molecular beam epitaxy on MOCVD-grown GaN template 

5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS (7) 2549-2552 2003年  

Ultra-flat and high-quality AlN thin films on sapphire (0001) substrates grown by rf-MBE 

5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS (7) 2511-2514 2003年  

Roles of Si irradiation during the growth interruption on GaN film qualities in plasma-assisted molecular beam epitaxy 

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 41(12B) L1428-L1430 2002年12月  

Improvement of DC characteristics in AlGaN/GaN heterojunction field-effect transistors employing AlN spacer layer 

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 41(9) 5563-5564 2002年9月  

Indium roles on the GaN surface studied directly by reflection high-energy electron diffraction observations 

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 41(8A) L873-L875 2002年8月  

Structure analysis of GaN thin film with inversion domains by high voltage atomic resolution microscopy 

MATERIALS TRANSACTIONS 43(7) 1542-1546 2002年7月  

High-Quality GaN Layers on c-Plane Sapphire Substrates by Plasma-Assisted Molecular-Beam Epitaxy Using Double-Step AlN Bu ･er Process 

Jpn.J.Appl.Phys 41(7A) 4454-4457 2002年7月  

Growth and characterizations of InGaN on N- and Ga-polarity GaN grown by plasma-assisted molecular-beam epitaxy 

JOURNAL OF CRYSTAL GROWTH 237 1148-1152 2002年4月