2005年
High-performance (110)-surface strained-SOI MOSFETs
Materials Science in Semiconductor Processing
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- 巻
- 8
- 号
- 1-3
- 開始ページ
- 327
- 終了ページ
- 336
- 記述言語
- 英語
- 掲載種別
- DOI
- 10.1016/j.mssp.2004.09.065
- 出版者・発行元
- ELSEVIER SCI LTD
We have studied (110)-surface strained-SOI n- and p-MOSFETs on (110)-surface relaxed Si0.75Ge0.25-on-insulator structures, applying the Ge condensation technique to SiGe layers grown on (110)-surface SOI wafers. We have demonstrated that the electron and the hole mobility enhancement of (110)-surface strained-SOI devices amounts to 23% and 50%, respectively, against the mobilities of (110)-surface unstrained MOSFETs. As a result, the electron and the hole mobility ratios of (110)-surface strained-SOI MOSFETs to the universal mobility of (100)-surface bulk-MOSFETs increase up to 81% and 203%, respectively. Therefore, the current drivability unbalance between n- and p-MOS can be reduced. Moreover, both the electron and the hole mobilities of the (110)-surface strained-SOIs strongly depend on the drain current flow direction, which is explained by anisotropic effective mass characteristics of the carriers. We have also introduced a simple model for electric field dependence of hole mobility of (110)-surface strained- and unstrained-MOSFETs. (110)-surface strained-SOI technology is also the candidate for higher speed scaled CMOS, optimizing the current flow directions of n- and p-MOS. (C) 2004 Elsevier Ltd. All rights reserved.
- リンク情報
- ID情報
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- DOI : 10.1016/j.mssp.2004.09.065
- ISSN : 1369-8001
- ORCIDのPut Code : 45568740
- Web of Science ID : WOS:000227056200060