2014年2月
Unexpected equivalent-oxide-thickness dependence of the subthreshold swing in tunnel field-effect transistors
APPLIED PHYSICS EXPRESS
- 巻
- 7
- 号
- 2
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.7567/APEX.7.024201
- 出版者・発行元
- IOP PUBLISHING LTD
Tunnel field-effect transistors (TFETs) exhibiting a minimum subthreshold swing (SS) of 27 mV/decade were successfully fabricated using conventional planar HfO2/Si-gate-stack structures. However, an unexpected SS degradation with increasing equivalent oxide thickness (EOT) was observed compared with the simulated results obtained under the assumption of ideal band-to-band tunneling. We found that the poor subthreshold operation was governed by a thermally activated process, suggesting trap-assisted tunneling that occurs with traps near the metallurgical pn junction. Furthermore, we discuss the effect of the observed EOT-sensitive SS degradation on device production. (C) 2014 The Japan Society of Applied Physics
- リンク情報
- ID情報
-
- DOI : 10.7567/APEX.7.024201
- ISSN : 1882-0778
- eISSN : 1882-0786
- ORCIDのPut Code : 45568712
- Web of Science ID : WOS:000331454000031