2019年
Germanium Layer Transfer with Low Temperature Direct Bonding and Epitaxial Lift-off Technique for Ge-based monolithic 3D integration
2019 SILICON NANOELECTRONICS WORKSHOP (SNW)
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- 開始ページ
- 9
- 終了ページ
- 10
- 記述言語
- 英語
- 掲載種別
- 研究論文(国際会議プロシーディングス)
- 出版者・発行元
- IEEE
We demonstrated high-quality single crystal Germanium (Ge) layer transferred on arbitrary substrates, such as Si, glass, and flexible plastic substrates utilizing direct bonding and epitaxial lift-off (ELO) techniques. Owing to Ge epitaxial growth on GaAs substrates with AlAs release layer, we successfully transferred epitaxial Ge layers on arbitrary substrates with a wide range of thickness from several um to 1 nm. This layer tranfer approach enables us to realize Ge-based monolithic 3D devices without degradation of Ge crystalline quality.
- リンク情報
- ID情報
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- ISSN : 2161-4636
- Web of Science ID : WOS:000501001400004