© 2020 IEEE. Post-Si materials, such as Ge or III-V compound semiconductors, have been considered as alternative channel materials to Si as well as optical components for adding new functions into current Si-LSI. It is necessary to form high quality Ge or III-V compound semiconductor layers onto Si wafers for realization of Si or post-Si hybrid devices. Combing high quality hetero-epitaxial growth, low-temperature bonding and advanced lift-off techniques, we have achieved Ge or III-V layer transfer on Si while possessing high crystallinity, and also validated superior device performance. Advanced layer transfer technology of Ge or III-V compound semiconductors provides a flexible opportunity to elaborate monolithic heterogeneous integration in a cost effective manner.