OTSUJI Taiichi

J-GLOBAL         Last updated: Sep 16, 2018 at 19:41
 
Avatar
Name
OTSUJI Taiichi
E-mail
otsujiriec.tohoku.ac.jp
URL
http://db.tohoku.ac.jp/whois/e_detail/4fbc5d764b50754c2acff947b2b28ed7.html
Affiliation
Tohoku University
Section
Research Institute of Electrical Communication Broadband Engineering Division Ultra-Broadband Signal Processing Ultra-Broadband Devices and Systems
Job title
Professor
Degree
博士(工学)(Tokyo Institute of Technology)

Research Areas

 
 

Academic & Professional Experience

 
Apr 2005
 - 
Today
教授, 東北大学電気通信研究所
 
Oct 2002
 - 
Mar 2005
教授, 九州工業大学情報工学部システム創成情報工学科 兼 マイクロ化総合技術センター
 
Apr 1999
 - 
Aug 2002
助教授, 九州工業大学情報工学部制御システム工学科
 
Jul 1998
 - 
Mar 1999
主幹研究員, 日本電信電話株式会社未来ねっと研究所
 
Feb 1998
 - 
Jun 1998
主任研究員, 日本電信電話株式会社光ネットワークシステム研究所
 

Education

 
 
 - 
Mar 1984
電子工学専攻, Graduate School, Division of Engineering, Kyushu Institute of Technology
 
 
 - 
Mar 1982
電子工学科, Faculty of Engineering, Kyushu Institute of Technology
 

Committee Memberships

 
Apr 2006
 - 
Mar 2008
電子情報通信学会エレクトロニクスソサエティテラヘルツ応用システム時限研究専門委員会  委員長
 
Apr 2003
 - 
Today
電子情報通信学会エレクトロニクスソサエティテラヘルツ応用システム時限研究専門委員会  委員
 
Apr 2005
 - 
Today
電子情報通信学会エレクトロニクスソサエティ電子デバイス研究専門委員会  委員
 
Sep 2005
 - 
Today
Device Research Conference Technical Program Committee  Member
 
Apr 2005
 - 
Today
テラヘルツテクノロジーフォーラム・企画委員会  委員
 

Awards & Honors

 
Jan 2014
for “contributions to plasmonic semiconductor integrated device technology for terahertz sensing.”, IEEE Fellow, IEEE
 
Jan 2013
IEEE Electron Device Society Distinguished Lecturer, IEEE
 
Nov 1998
An 80-Gbit/s Multiplexer IC using InAlAs/InGaAs/InP HEMTs, Outstanding Paper Award, 1997 IEEE GaAs IC Symposium, IEEE GaAs IC Symposium Committee
Winner: Taiichi Otsuji, Koichi Murata, Takatomo Enoki, Yotaro Umeda
 

Published Papers

 
S. Boubanga-Tombet, D. Yadav, W. Knap, V.V. Popov, and T. Otsuji
DRC: the 76th Annual Device Research Conference Dig., UCSB, CA, USA, June 24-27, 2018.   1(1) 1-2   Jun 2018   [Refereed]
Graphene-based 2D heterostructure materials for terahertz photonics and plasmonics light-sources applications
OTSUJI Taiichi
2nd Global Summit & Expo on Laser Optics & Photonics 2018 Dig., Rome, Italy, June 14-16, 2018.   1(1) 1-2   Jun 2018   [Refereed][Invited]
OTSUJI Taiichi
Journal of Nanomaterials & Molecular Nanotechnology [Proc. of the 24th World Nano Conference, Black Hotel Rome, Rome, Italy, May 7-8, 2018.],   7 59-60   May 2018   [Refereed][Invited]
S. Boubanga-Tombet, D. Yadav, W. Knap. V.V. Papov, and T. Otsuji
CLEO: Int. Conf. on Lasers and Electro-Optics Dig., San Jose, CA, USA, May 13-18, 2017.   1(1) SW4D.4-1-2   May 2018   [Refereed]
V. Ryzhii, T. Otsuji, V. Aleshkin, A. Dubinov, S. Morozov, M. Ryzhii, V. Mitin, and M. Shur
Opt. Mat. Exp.   8(5) 1349-1358   Apr 2018   [Refereed]
D. Yadav, T. Watanabe, A. Satou, M. Ryzhii, V. Ryzhii, and T. Otsuji
2nd Edition of Graphene & Semiconductors | Diamond, Graphite & Carbon Materials Conference Abstracts, Las Vegas, NV, USA, April 16-17, 2018.   1(1) 43   Apr 2018   [Refereed][Invited]
Gayduchenko, Igor; Fedorov, Georgy; Moskotin, Maxim; Yagodkin, Denis; Seliverstov, Sergey; Gol'tsman, Gregory; Kuntsevich, Alexander; Rybin, Maxim; Obraztsova, Elena; Leiman, Vladimir; Shur, Michael; Otsuji, Taiichi; Ryzhii, Victor
Nanotechnology   29(24) 245204-1-8   Apr 2018   [Refereed]
D. Yadav, G. Tamamushi, T. Watanabe, J. Mitsushio, Y. Tobah, K. Sugawara, A.A. Dubinov, M. Ryzhii, V. Ryzhii, and T. Otsuji
Nanophotonics   7(4) 741-752   Apr 2018   [Refereed]
Terahertz light emission and lasing in graphene-based van der Waals 2D heterostructures
T. Otsuji
XXII International Symposium on Nanophysics and Nanoelectronics Dig.   1(1) 6A-I1-1-2   Mar 2018   [Refereed][Invited]
Emission and detection of terahertz radiation using graphene-based atomically-thin 2D heterostructures
T. Otsuji
MANA Int. Symp. Dig., Tsukuba, Japan, March 2018.   1(1) S2-2I-1-2   Mar 2018   [Refereed][Invited]
Dmitry Ponomarev, Denis Lavrukhin, Alexander Yachmenev, Rustam Khabibullin, Igor Semenikhin, Vladimir Vyurkov, Maxim Ryzhii, Taiichi Otsuji, and Victor Ryzhii
J. Phys. D: Appl. Phys.   51(13) 135101-1-8   Mar 2018   [Refereed]
V. Ryzhii, T. Otsuji, V.E. Karasik, M. Ryzhii, V.G. Leiman, V. Mitin, and M.S. Shur
IEEE J. Quantum Electron.   54(2) 1558-1713   Jan 2018   [Refereed]
V. Ryzhii, M.S. Shur, M. Ryzhii, V.E. Karasik, and T. Otsuji
J. Appl. Phys.   123 014503-1-9   Jan 2018   [Refereed]
Concepts of infrared and terahertz photodetectors based on van der Waals heterostructures with graphene layers
V. Ryzhii, T. Otsuji, and M.S. Shur
WINDS17: 16: 2017 International Workshop on Innovative Nanoscale Devices and Systems Abstracts, Big Island Hawaii, USA, Nov 26 - Dec. 1, 2017.   1(1) S3-2-1-2   Nov 2017   [Refereed][Invited]
Terahertz light emission and lasing in graphene-based van der Waals 2D heterostructures
D. Yadav, T. Watanabe, S. boubanga-Tombet, A. Satou, V. Ryzhii, and T. Otsuji
WINDS17: 16: 2017 International Workshop on Innovative Nanoscale Devices and Systems Abstracts, Big Island Hawaii, USA, Nov 26 - Dec. 1, 2017.   1(1) S3-3-1-2   Nov 2017   [Refereed][Invited]
M. Ryzhii, V. Ryzhii, T. Otsuji, and M.S. Shur
IEEE COMCAS: International Conference on Microwave, Communications, Antennas and Electronic systems Dig., David Intercontinental Hotel, Tel Aviv, Israel, Nov. 13-15, 2017.   1(1) 1-4   Nov 2017   [Refereed]
Terahertz light emission and lasing in graphene transisters under current-injection pumping
T. Otsuji
MTSA2017-CTOXMAND-TeraNano-8 Dig., Okayama, Japan, Nov. 19-23, 2017.   1(1) WeA1-I2-1-2   Nov 2017   [Refereed][Invited]
T. Hosotani, F. Kasuya, M. Suzuki, T. Suemitsu, T. Otsuji, Y. Takida, H. Ito, H. Minamide, T. Ishibashi, M. Shimizu, and A. Satou
RJUSE TeraTech 2017: Russia-Japan-USA-Europe Symposium on Fundamental & Applied Problems of Terahertz Devices & Technologies Dig., Rensselaer Polytechnic Institute, Troy, NY, USA, Oct. 1-5, 2017.   1(1) IV-O2   Oct 2017   [Refereed]
Temperature dependence of the conductivity in dual gate graphene field effect transistors
K. Sugawara, T. Watanabe, T. Komiyama, T. Fuse, M. Ryzhii, V. Ryzhii, H. Fukidome, M. Suemitsu, and T. Otsuji
RJUSE TeraTech 2017: Russia-Japan-USA-Europe Symposium on Fundamental & Applied Problems of Terahertz Devices & Technologies Dig., Rensselaer Polytechnic Institute, Troy, NY, USA, Oct. 1-5, 2017.   1(1) IV-O1   Oct 2017   [Refereed]
Infrared and terahertz detectors on graphene van der Waals heterostructures and effect of doping
V. Mitin, V. Ryzhii, M. Ryzhii, T. Otsuji, and M.S. Shur
RJUSE TeraTech 2017: Russia-Japan-USA-Europe Symposium on Fundamental & Applied Problems of Terahertz Devices & Technologies Dig., Rensselaer Polytechnic Institute, Troy, NY, USA, Oct. 1-5, 2017.   1(1) V-I4   Oct 2017   [Refereed][Invited]
Terahertz light emission and lasing in graphene transistors under current-injection pumping
T. Otsuji, D. Yadav, T. Watanabe, S. Boubanga-Tombet, A. Satou, T. Suemitsu, V. Ryzhii, A.A. Dubinov, M. Ryzhii, V. Mitin, and M.S. Shur
RJUSE TeraTech 2017: Russia-Japan-USA-Europe Symposium on Fundamental & Applied Problems of Terahertz Devices & Technologies, Rensselaer Polytechnic Institute, Troy, NY, USA, Oct. 1-5, 2017.   1(1) I-P2   Oct 2017   [Refereed][Invited]
Terahertz light emission and lasing in graphene-based vdW 2D heterostructures
T. Otsuji
RPGR2017: Int. Conf. Recent Progress in Graphene and 2D Materials Research, Singapore, Sept. 19-22, 2017.   1(1) WD-I2-1-2   Sep 2017   [Refereed][Invited]
Terahertz light emission and lasing in graphene-based heterostructure 2D material systems -theory and experiments
T. Otsuji
NANOP 2017: International Conference on Nanophotonics and Micro/Nano Optics Abstract Book, Barcelona, Spain, Sept. 13-15, 2017.   1(1) 115-116   Sep 2017   [Refereed][Invited]
J.A. Delgado Notario, E. Javadi, V. Clericò, K. Fobelets, T. Otsuji, E. Diez, J.E. Velázquez-Pérez and Y.M. Meziani
Journal of Physics: Conference Series [20th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON 20), Buffalo, New York, USA, 17–21 July 2017]   906 012003-1-4   Sep 2017   [Refereed]
D. Yadav, Y. Tobah, K. Sugawara, J. Mitsushio, G. Tamamushi, T. Watanabe, A.A. Dubinov, M. Ryzhii, V. Ryzhii, and T. Otsuji
IRMMW-THz: 42nd International Conference on Infrared, Millimeter and Terahertz Waves Dig., Cancun, Quintana Roo, Mexco, Aug. 30, 2017.   1(1) WB3.5-1-2   Aug 2017   [Refereed][Invited]
K.-T. Lin, Q. Weng, H. Nema, S. kim, K. Sugawara, T. Otsuji, S. Komiyama, and Y. Kajiwara
IRMMW-THz: 42nd International Conference on Infrared, Millimeter and Terahertz Waves Dig., Cancun, Quintana Roo, Mexco, Aug. 30, 2017.   1(1) WC1.1-1-2   Aug 2017   [Refereed]
T. Hosotani, F. Kasuya, M. Suzuki, T. Suemitsu, T. Otsuji, Y. Takida, H. Ito, H. Minamide, T. Ishibashi, M. Shimizu, and A. Satou
IRMMW-THz: 42nd International Conference on Infrared, Millimeter and Terahertz Waves Dig., Cancun, Quintana Roo, Mexco, Aug. 28, 2017.   1(1) MD.30-1-2   Aug 2017   [Refereed]
J.A. Delgado Notario, V. Clerico, Y.M. Meziani, E. Diez, J.E. Velázquez, T. Taniguchi, K. Watanabe, D. Yadav, and T. Otsuji
IRMMW-THz: 42nd International Conference on Infrared, Millimeter and Terahertz Waves Dig., Cancun, Quintana Roo, Mexco, Aug. 30, 2017.   1(1) WB3.2   Aug 2017   [Refereed]
Terahertz light emitting graphene-channel transistor operating uner current-injection pumping
K. Sugawara, D. Yadav, Y. Tobah, J. Mitsushio, G. Tamamushi, T. Watanabe, A.A. Dubinov, M. Ryzhii, V. Ryzhii, and T. Otsuji
TWHM: Topical Workshop on Heterostructure Microelectronics Dig., Kagoshima, Japan, Aug. 28-31, 2017.   1(1) S2-4-1-2   Aug 2017   [Refereed]
Frequency down-conversion from optical data signal to MMW IF data signal using InP-HEMT
Y. Omori, T. Hosotani, T. Suemitsu, K. Iwatsuki, T. Otsuji, and A. Satou
The 24th Congress of the International Commissions for Optics Dig., Keio-Plaza Hotel, Tokyo, 21-25 Aug. 2017.   1(1) Tu2G-05-1-2   Aug 2017   [Refereed]
O.V. Polischuk, D. V. Fateev, T. Otsuji, and V.V. Popov
Appl. Phys. Lett.   111(8) 081110-1-4   Aug 2017   [Refereed]
Broadband terahertz light emission and lasing in graphene-based van der Waals heterostructures
T. Otsuji, D. Yadav, T. Watanabe, S.A. Boubanga-Tombet, V. Ryzhii, A.A. Dubinov, D. Svintsov, M. Ryzhii, V. Mitin, and M.S. Shur
EMN: Energy Materials Nanotechnology Lyon Meeting on 2D Materials Dig., Lyon, France, Aug. 9-11, 2017.   1(1) 42-44   Aug 2017   [Refereed][Invited]
V. Ryzhii, M. Ryzhii, S. Svintsov, V. Leiman, V. Mitin, M.S. Shur, and T. Otsuji
J. Appl. Phys.   122 054505-1-8   Aug 2017   [Refereed]
K.-T. Lin, Q. Weng, H. Nema, S. kim, K. Sugawara, T. Otsuji, S. Komiyama, and Y. Kajiwara
EP2DS: 22nd International Conference on Electronic Properties of Two Dimensional Systems Abst., Penn State Univ., PA, USA, July 31-August 4, 2017.   1(1) 2DO-9   Aug 2017   [Refereed]
A. Satou and T. Otsuji
Proc. SPIE [SPIE OPTO+ Photonics, Conference on Infrared Remote Sensing and Instrumentation XXV, 104003-27, San Diego Convention Center, San Diego, CA, USA, 6-10 Aug. 2017]   10403 104030S1-12   Aug 2017   [Refereed][Invited]
Temperature-Dependent Broadening of Carrier Energy Dispersion in Graphene by Electron-Electron Interaction and Its Effect on Auger Scatterings
T. Komatsu, V. Ryzhii, T. Otsuji, D. Svintsov, and A. Satou
The 20th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON 20) Dig., University at Buffalo, Buffalo, NY, USA, 17-21 July, 2017.   1(1) MoP23   Jul 2017   [Refereed]
hBN/graphene devices: Fabrication and characterization
J.A. Delgado Notario, V. Clericó, T. Otsuji, J.E. Velázquez-Pérez, Y.M. Meziani, and E. Diez
The 20th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON 20) Dig., Buffalo, New York, USA, 17–21 July 2017.   1(1) MoP25   Jul 2017   [Refereed]
Fuyumi Hemmi, Cedric Thomas, Yi-Chun Lai, Akio Higo, Yoh Watamura, Seiji Samukawa, Taiichi Otsuji, and Tetsuya Suemitsu
Solid-State Electronics   137 1-5   Jul 2017   [Refereed]
Terahertz light emission in graphene-based active plasmonic metamaterial heterostructures
T. Otsuji, T. Watanabe, A. Satou, D. Yadav, S. Boubanga-Tombet, T. Suemitsu, and V. Ryzhii
META'17: the 8th International Conference on Metamaterials, Photonic Crystals and Plasmonics Abstract Book, Incheon, Korea, 25-28 July 2017.   1(1) SP22.I2   Jul 2017   [Refereed][Invited]
MMW Photonic Double-Mixing and THz Plasmonic Detection Using InP HEMTs
A. Satou, and T. Otsuji
Global Symposium on Lasers, Optics, and Photonics Abst., Valencia, Spain, June 19-21, 2017.   1(1) S1-3   Jun 2017   [Refereed][Invited]
D. Yadav, Y. Tobah, K. Sugawara, J. Mitsushio, G. Tamamushi, T. Watanabe, A.A. Dubinov, M. Ryzhii, V. Ryzhii, and T. Otsuji
DRC: 75th Annual Device Research Conference Dig., Notre Dame, IN, USA, May 26-28, 2017.   1(1) 273-274   Jun 2017   [Refereed]
Graphene-based heterostructures: Device concepts and prospects
V. Ryzhii, and T. Otsuji
The 25th International Symposium “Nanostructures: Physics and Technology” Abst., St. Petersburg, Russia, June 26-30, 2017.   1(1) GRN.02i   Jun 2017   [Refereed][Invited]
K.-S. Kim, G.-H. Park, H. Fukidome, T. Suemitsu, T. Otsuji, W.-J. Cho, and M. Suemitsu
Jpn. J. Appl. Phys.   56(06) 06GF09-1-5   May 2017   [Refereed]
OTSUJI Taiichi
CLEO: Int. Conf. on Lasers and Electro-Optics Dig., San Jose, CA, USA, May 14-19, 2017.   1(1) AM2B.7-1-2   May 2017   [Refereed]
Effective electron velocity in InGaAs-HEMTs with slant field plates
T. Hosotani, T. Otsuji, and T. Suemitsu
CSW: Compound Semiconductor Week Dig., Berlin, ‎Brandenburg, Germany, May 14–18, 2017.   1(1) A5.5-1-2   May 2017   [Refereed]
Effect of selective doping on characteristics of graphene-van der Waals heterostructure terahertz and infrared detectors
Victor Ryzhii, Taiichi Otsuji, Maxim Ryzhii, Vladimir G. Leiman, Dmitry Svintsov, Vladimir Mitin, and Michael S. Shur
The 38th PIERS: Progress in Electromagnetics Research Symposium Abstracts, St. Petersburg, Russia, 22-25 May, 2017.   1(1) 1P_10-12   May 2017   [Refereed]
Resonance tunneling of photons and surface plasmons in graphene-based heterostructures
Andrey Bylinkin, Dmitry Svintsov, Victor Ryzhii, and Taiichi Otsuji
The 38th PIERS: Progress in Electromagnetics Research Symposium Abstracts, St. Petersburg, Russia, 22-25 May, 2017.   1(1) 1A_12a-1   May 2017   [Refereed]
Current-injection terahertz lasing in graphene-based transistor lasers
OTSUJI Taiichi
ETCMOS: Int. Conf. on Emerging Technology on CMOS and Related Devices Abst., Hotel Sofitel Warsaw Victoria, Warsaw, Poland, May 28-30, 2017.   1(1) B3-1   May 2017   [Refereed][Invited]
T. Hosotani, F. Kasuya, H. Taniguchi, T. Watanabe, T. Suemitsu, T. Otsuji, T. Ishibashi, M. Shimizu, and A. Satou
IEEE IMS: 2017 IEEE Int. Microwave Symposium Dig., Honolulu, Hawaii, USA, June 4-9, 2017.   1(1) 578-581   May 2017   [Refereed]
Current-injection terahertz emission in distributed-feedback dual-gate graphene-channel field-effect transistor
D. Yadav, Y. Tobah, G. Tamamushi, J.i Mitsushio, T. Watanabe, A.A. Dubinov, M. Ryzhii, V. Ryzhii, and T. Otsuji
OTST'17: Int. Conf. Optical Terahertz Science and Technology Abstract Book, London, UK   1(1) 66   Apr 2017   [Refereed]
D. Yadav, J. Mitsushio, Y. Tobah, G. Tamamushi, T. Watanabe, A.A. Dubinov, M. Ryzhii, V. Ryzhii, and T. Otsuji
Graphene 2017: 7th Edition of the European Conference & Exhibition in Graphene and 2D Materials Dig., Barcelona, Spain   1(1) WS1-1900-1-1   Mar 2017   [Refereed]
Dynamic conductivity and two-dimensional plasmons in lateral CNT networks
M. Ryzhii, T. Otsuji, V. Ryzhii, V. Mitin, M.S. Shur, G. Fedorov, and V. Leiman
Int. J. High Speed Electron. Sys.   26(01n02) 174004-1-10   Mar 2017   [Refereed]
10.1142/S0129156417400043
V. Ryzhii, M. Ryzhii, D. Svintsov, V. Leiman, V. Mitin, M.S. Shur, and T. Otsuji
Opt. Exp.   25(5) 5536-5549   Mar 2017   [Refereed]
V. Ryzhii, M. Ryzhii, D. Svintsov, L. Leiman, V. Mitin, M.S. Shur, and T. Otsuji
Infrared Phys. Technol.   84 72-81   Mar 2017   [Refereed]
G. Tamamushi, T. Watanabe, J. Mitsushio, A.A. Dubinov, A. Satou, T. Suemitsu M. Ryzhii, V. Ryzhii, and T. Otsuji
SPIE OPTO: Conference on "Quantum Sensing and Nano Electronics and Photonics XIV", San Fransisco, CA, USA; Proc. SPIE   10111(1) 1011126-1-6   Feb 2017   [Refereed][Invited]
Sub-Terahertz detection and imaging using strained silicon FET
Y.M. Meziani, J.A. Delgado Notario, E. Javadi, K. Fobelets, T. Otsuji, E. Diez, and J.E. Velázquez
Nanolito2017: Workshop on Nanodevices based on Graphene and 2D Systems Dig., Salamanca, Spain   1(1) P-05-1-1   Jan 2017   [Refereed]
A.A. Dubinov, A. Bylinkin, V. Ya Aleshkin, V. Ryzhii, T. Otsuji, and D. Svintsov
Opt. Exp.   24(26) 29603-29612   Dec 2016   [Refereed]
Neutral beam process in AlGaN/GaN HEMTs: impact on current collapse
Fuyumi Hemmi, Cedric Thomas, Yi-Chun Lai, Akio Higo, Seiji Samukawa, Taiichi Otsuji, and Tetsuya Suemitsu
ISDRS: Int. Semiconductor Device Research Symposium Proc., Hyatt Regency Hotel, Bethesda, Maryland, USA   1(1) FP1-03-1-2   Dec 2016   [Refereed][Invited]
Infrared and terahertz detectors based on graphene-van der Waals heterostructures
V. Ryzhii, M. Ryzhii, T. Otsuji, D. Svintsov, V. Leiman, V. Mitin, and M.S. Shur
WINDS16: 2016 International Workshop on Innovative Nanoscale Devices and Systems Abstracts, Big Island Hawaii, USA   1(1) 38-38   Dec 2016   [Refereed][Invited]
Current-injection terahertz lasing in graphene-channel field effect transistors
G. Tamamushi, T. Watanabe, A. Dubinov, T. Suemitsu, A. Satou, M. Ryzhii, V. Ryzhii, and T. Otsuji
WINDS16: 2016 International Workshop on Innovative Nanoscale Devices and Systems Abstracts, Big Island Hawaii, USA   1(1) 18-18   Dec 2016   [Refereed][Invited]
K. Wakita, E. Sano, M. Ikebe, S. Arnold, T.i Otsuji, Y. Takida, and H. Minamide
Int. J. High Speed Electron. Sys.   25(03n04) 1640014-1-9   Dec 2016   [Refereed]
V. Mitin, V. Ryzhii, M. Ryzhii, A. Satou, T. Otsuji, and M.S. Shur
Int. J. High Speed Electron. Sys.   25(03n04) 1640019-1-7   Dec 2016   [Refereed]
T. Otsuji
5th International Conference and Exhibition on Lasers, Optics & Photonics Proc., Hilton Atlanta Airport, Atlanta, GA, USA; J. Lasers, Opt. & Photon.   3(3) 40-40   Nov 2016   [Refereed][Invited]
F. Hemmi, C. Thomas, Y.-C. Lai, A. Higo, A. Guo, S. Warnock, J.A. del Alamo, S. Samukawa, T. Otsuji, and T. Suemitsu
Phys. Stat. Solidi A   214(3) 1600617-1-5   Nov 2016   [Refereed]
Array configuration and silicon-lens integration of asymmetric dual-grating-gate HEMT for improvement of light coupling efficiency
F. Kasuya, H. Taniguchi, T. Watanabe, T. Suemitsu, T. Otsuji, T. Ishibashi, M. Shimizu, Y. Takida, H. Ito, H. Minamide, and A. Satou
RJUSE: 5th Russia-Japan-USA-Europe Symposium on Fundamental & Applied Problems of Terahertz Devices & Technologies Tech. Dig., Sendai, Miyagi, Japan   1(1) 118-121   Nov 2016   [Refereed]
Plasmonic enhancement of terahertz devices efficiency
V. Mitin, V. Ryzhii, M. Ryzhii, A. Satou, T. Otsuji, and M.S. Shur
RJUSE: 5th Russia-Japan-USA-Europe Symposium on Fundamental & Applied Problems of Terahertz Devices & Technologies Tech. Dig., Sendai, Miyagi, Japan   1(1) 102-105   Nov 2016   [Refereed][Invited]
Double graphene layer van der Waals heterostructures for terahertz emission and detection
D. Yadav, S. Boubanga-Tombet, T. Watanabe, V. Ryzhii, and T. Otsuji
RJUSE: 5th Russia-Japan-USA-Europe Symposium on Fundamental & Applied Problems of Terahertz Devices & Technologies Tech. Dig., Sendai, Miyagi, Japan   1(1) 106-109   Nov 2016   [Refereed]
InP HEMT and graphene FET for optical to sub-THz carrier frequency conversion
A. Satou, K. Sugawara, G. Tamamushi, T. Watanabe, A. Dobroiu, T. Suemitsu, H. Fukidome, M. Suemitsu, V. Ryzhii, K. Iwatsuki, S. Kuwano, J. Kani, J. Terada, and T. Otsuji
RJUSE: 5th Russia-Japan-USA-Europe Symposium on Fundamental & Applied Problems of Terahertz Devices & Technologies Tech. Dig., Sendai, Miyagi, Japan   1(1) 182-185   Nov 2016   [Refereed]
Design and fabrication of terahertz detectors based on 180-nm CMOS process technology
K. Wakita, M. Ikebe, S. Arnold, T. Otsuji, Y. Takida, H. Minamide, and E. Sano
RJUSE: 5th Russia-Japan-USA-Europe Symposium on Fundamental & Applied Problems of Terahertz Devices & Technologies Tech. Dig., Sendai, Miyagi, Japan   1(1) 30-33   Nov 2016   [Refereed]
A numerical model for finite-temperature self-energy in doped graphene with electron-electron interaction
T. Komatsu, T. Otsuji, V. Ryzhii, D. Svintsov, V. Vyurkov, and A. Satou
Graphene Canada: Graphene & 2D Materials International Conference and Exhibition Dig., Montreal, Canada   1(1) P1-1-1   Oct 2016   [Refereed]
D. Yadav, S. Boubanga-Tombet, T. Watanabe, S. Arnold, V. Ryzhii, and T. Otsuji
2D Materials   3(4) 045009-1-8   Oct 2016   [Refereed]
T. Hosotani, T. Otsuji, and T. Suemitsu
Appl Phys. Exp.   9(11) 114101-1-3   Oct 2016   [Refereed]
Terahertz bolometer based on Sn nanothreads in GaAs
I. Semenikhin, V. Vyurkov, A. bugayev, R. Khabibullin, D. Ponomarev, A. Yachmenev, P. Maltsev, M. Ryzhii, T. Otsuji, and V. Ryzhii
ICMNE: Int. Conf. on Micro- and Nano-Electronics Dig., The "Ershovo" resort, Zvenigorod, Moscow Region, Russia   1(1) O3-08-1-1   Oct 2016   [Refereed]
Current injection terahertz lasing in graphene-channel field-effect transistors under population inversion
T. Watanabe, G. Tamamushi, A.A. Dubinov, A. Satou, M. Ryzhii, V. Ryzhii, and T. Otsuji
ICMNE: Int. Conf. on Micro- and Nano-Electronics Dig., The "Ershovo" resort, Zvenigorod, Moscow Region, Russia   1(1) L2-01-1-1   Oct 2016   [Refereed][Invited]
Emission and detection of terahertz radiation in graphene/hBN heterostructures
S. Boubanga Tombet, D. Yadav, T. Watanabe, V. Ryzhii, and T. Otsuji
ICMNE: Int. Conf. on Micro- and Nano-Electronics Dig., The "Ershovo" resort, Zvenigorod, Moscow Region, Russia   1(1) L2-02-1-1   Oct 2016   [Refereed][Invited]
Detectors of infrared and terahertz radiation based on graphene-van der Waals heterostructures
V. Ryzhii, M. Ryzhii, V. Leiman, D. Svintsov, V. Mitin, M.S. Shur, and T. Otsuji
ICMNE: Int. Conf. on Micro- and Nano-Electronics Dig., The "Ershovo" resort, Zvenigorod, Moscow Region, Russia   1(1) L2-03-1-1   Oct 2016   [Refereed][Invited]
Graphene-based 2D heterostructures for current-injection terahertz lasing
T. Otsuji
TERA NANO VII: the 7th Int. Symp. on Terahertz Nanoscience Dig., IGESA Center, Porquerolles, France   10224(1) S8-2-1-2   Oct 2016   [Refereed][Invited]
I. Semenikhin, V. Vyurkov, A. Bugaev, R. Khabibullin, D. Ponomarev, A. Yachmenev, P. Maltsev, M. Ryzhii, T. Otsuji, and V. Ryzhii
International Conference on Micro- and Nano-Electronics 2016, Zvenigorod, Russia; Proc. SPIE   10224(1) 102240R-1-10   Oct 2016   [Refereed]
G. Tamamushi, T. Watanabe, A. Dubinov, H. Wako, A. Satou, T. Suemitsu, M. Ryzhii, V. Ryzhii, and T. Otsuji
IRMMW-THz: 41st International Conference on Infrared, Millimeter and Terahertz Waves Proc., T4C.6, Bella Center, Copenhagen, Denmark   1(1) F2C.5-1-2   Sep 2016   [Refereed]
F. Kasuya, H. Taniguchi, T. Watanabe, T. Suemitsu, T. Otsuji, T. Ishibashi, M. Shimizu, Y. Takida, H. Ito, H. Minamide, and A. Satou
IRMMW-THz: 41st International Conference on Infrared, Millimeter and Terahertz Waves Proc., T4C.6, Bella Center, Copenhagen, Denmark   1(1) T4C.6-1-2   Sep 2016   [Refereed]
M. Ryzhii, V. Ryzhii, A. Satou, T. Otsuji, V. Mitin, and M.S. Shur
SISPAD: 2016 International Conference on Simulation of Semiconductor Processes and Devices Proc., Le Meridien Grand Hotel Nuremberg, Nuremberg; Germany; 6-8 Sept. 2016.   1(1) 361-364   Sep 2016   [Refereed]
D. Svintsov, Zh. Devizorova, T. Otsuji, and V. Ryzhii
Phys. Rev. B   94(11) 115301-1-12   Sep 2016   [Refereed]
F. Kasuya, H. Taniguchi, T. Watanabe, T. Suemitsu, T. Otsuji, Y. Takida, H. Ito, H. Minamide, T. Ishibashi, M. Shimizu, and A. Sato
IEEE NANO 2016: the 2016 IEEE 16th International Conference on Nanotechnology Proc., Sendai International Conference Center, Sendai, Japan   1(1) 116-118   Aug 2016   [Refereed]
Terahertz emission and detection in graphene-based heterostructures
S. Boubanga Tombet, D. Yadav, G. Tamamushi, T. Watanabe, A.A. Dubinov, A. Satou, T. Suemitsu, M. Ryzhii, V. Ryzhii, and T. Otsuji
Global Grapheen Forum 2016 Proc., Mariella, Viking Line, Stockholm, Sweden   1(1) W-II-I2-1-2   Aug 2016   [Refereed][Invited]
Graphene-based van der Waals heterostructures for terahertz device applications
T. Otsuji, S.A. Boubanga Tombet, D. Yadav, and V. Ryzhii
IEEE NANO 2016: the 2016 IEEE 16th International Conference on Nanotechnology Dig., Sendai International Conference Center, Sendai, Japan   1(1) Tu3-1-1   Aug 2016   [Refereed][Invited]
Cross sectional observation of slant field plates integrated to InAlAs/InGaAs HEMTs
T. Hosotani, T. Otsuji, and T. Suemitsu
IEEE 2016 Lester Eastman Conference on High Performance Devices Dig., Lehigh Univ., Bethlehem, PA, USA   1(1) P4-1-2   Aug 2016   [Refereed]
Graphene-based van der Waals heterostuctrue plasmonic metamaterials for terahertrz device applications
T. Otsuji, D. Svintsov, A. Dubiniv, D. Yadav, S. boubanga Tombet, T. Watanabe, A. Ssatou, V. Ryzhii, V. Mitin, and M.S. Shur
META 2016: 7th International Conference on Metamaterials, Photonic Crystals and Plasmonics Proc., Torremolinos Congress Center, Malaga, Spain   1(1) 181-182   Jul 2016   [Refereed][Invited]
ISSN: 2429-1390
Victor Ryzhii, Taiichi Otsuji, Maxim Ryzhii, Vladimir Georgievich Leiman, Georgy Fedorov, Gregory Goltsman, Igor Gayduchenko, Nadezhda Titova, Dominique Coquillat, Dmitry But, Wojciech Knap, Vladimir Mitin, Michael S. Shur
J. Appl. Phys.   120 044501-1-13   Jul 2016   [Refereed]
A. Satou, G. Tamamushi, K. Sugawara, J. Mitsushio, V. Ryzhii, and T. Otsuji
IEEE Trans. Electron Dev.   63(8) 3300-3306   Jul 2016   [Refereed]
V. Ryzhii, M. Ryzhii, M.S. Shur, V. Mitin, A. Satou, and T. Otsuji
J. Phys. D: Appl. Phys.   49(31) 315103-1-14   Jul 2016   [Refereed]
A fitting model for extraction of intrinsic transistor parameters in graphene FETs
J. Mitsushio, G. Tamamushi, K. Sugawara, A. Satou, T. Suemitsu, H. Fukidome, M. Suemitsu, and T. Otsuji
AWAD 2016: Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices Proc., Hakodake, Hokkaido, Japan   1(1) A7-5-1-5   Jul 2016   [Refereed]
Sub-THz Photonic Double-Mixing Conversion Using Transistors
A. Satou, K. Sugawara, G. Tamamushi, T. Watanabe, A. Dobroiu, T. Suemitsu, H. Fukidome, M. Suemitsu, V. Ryzhii, K. Iwatsuki, S. Kuwano, J. Kani, J. Terada, and T. Otsuji
AWAD 2016: Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices Proc., Hakodake, Hokkaido, Japan   1(1) A5-5-1-6   Jul 2016   [Refereed]
T. Watanabe, H. Wako, A. Satou, A.A. Dubinov, K. Kawahara, H. Ago, V. Ryzhii, and T. Otsuji
CSW: Conpound Semiconductor Week 2016; a joint venue for the 43rd International Symposium on Compound Semiconductors (ISCS) and the 28th International Conference on Indium Phosphide and Related Materials (IPRM) Proc., Toyama International Conference Cente   1(1) ThC2-2-1-2   Jun 2016   [Refereed]
F. Hemmi, C. thomas, Y.-C. Lai, A. Higo, A. guo, S. Warnock, J.A. del Alamo, S. Samukawa, T. Otsuji, and T. Suemitsu
CSW: Conpound Semiconductor Week 2016; a joint venue for the 43rd International Symposium on Compound Semiconductors (ISCS) and the 28th International Conference on Indium Phosphide and Related Materials (IPRM) Proc., Toyama International Conference Cente   1(1) WeB2-4-1-2   Jun 2016   [Refereed]
T. Hosotani, T. Otsuji, and T. Suemitsu
CSW: Conpound Semiconductor Week 2016; a joint venue for the 43rd International Symposium on Compound Semiconductors (ISCS) and the 28th International Conference on Indium Phosphide and Related Materials (IPRM) Proc., Toyama International Conference Cente   1(1) TuD4-5-1-2   Jun 2016   [Refereed]
Akira Satou, Gen Tamamushi, Kenta Sugawara, Junki Mitsushio, Victor Ryzhii, and Taiichi Otsuji
CSW: Conpound Semiconductor Week 2016; a joint venue for the 43rd International Symposium on Compound Semiconductors (ISCS) and the 28th International Conference on Indium Phosphide and Related Materials (IPRM) Proc., Toyama International Conference Cente   1(1) MoP-ISCS-117-1-2   Jun 2016   [Refereed]
G. Tamamushi, T. Watanabe, A. Dubinov, J. Mitsushio, H. Wako, A. Satou, T. Suemitsu, H. Fukidome, M. Suemitsu, M. Ryzhii, V. Ryzhii, and T. Otsuji
DRC: 2016 74th Annual Device Research Conference Digest, Univ. Delaware, DL, USA   1(1) 225-226   Jun 2016   [Refereed]
Plasmonic terahertz detector based on graphene split-gate FET with nanoconstrictions in lateral p-n junction depletion region
V. Ryzhii, M. Ryzhii, A. Satou, T. Otsuji, V. Mitin, and M.S. Shur
QSIP 2016: Quantum Structured Photodetector International Conference Proc., Ter Aviv, Israel   1(1) Th1130-1-2   Jun 2016   [Refereed]
Y. Koseki, V. Ryzhii, T. Otsuji, V. V. Popov, and A. Satou
Phys. Rev. B   93(24) 245408-1-5   Jun 2016   [Refereed]

Misc

 
テラヘルツ波技術の進展と実用化への展望
尾辻泰一
電子情報通信学会誌   91(2) 150-152   Feb 2008
テラヘルツ波領域におけるメタマテリアルの応用
尾辻泰一
光学   36(10) 578-583   Oct 2007
プラズモン共鳴を利用した新原理半導体デバイスの室温テラヘルツ電磁波放射
Taiichi Otsuji
機能材料   27(3) 41-47   Feb 2007
プラズモン共鳴テラヘルツ光源デバイス=半導体へテロ接合構造による新原理フォトミキサーデバイスの実現
尾辻泰一, 佐野栄一
光アライアンス   17(12) 19-23   Dec 2006
Taiichi Otsuji
応用物理   71(11) 1352-1356   Nov 2002

Books etc

 
グラフェンの最先端技術と拡がる応用 ―グラフェンの材料科学、成長・合成技術、各種デバイス応用―
尾辻泰一 (Part:Supervisor, 第1章"総論," 第6章3節"グラフェンのプラズモン特性とテラヘルツデバイス応用," 他)
フロンティア出版   Jul 2012   
Advances in Imaging and Sensing
Shuo Tang and Daryosh Saeedkia edited. (Part:Joint Work, Chapt. 1: "Theory and Experiments on THz Devices on Graphene," pp. 3-35; T. Otsuji and V. Ryzhii.)
CRC Press   Oct 2016   ISBN:9781498714754
Nanoscale Materials and Devices for Electronics, Photonics, and Solar Energy, Nanostructure Science and Technology, edited by A. Korkin, S. Goodnick, and R. Nemanich
T. Otsuji, V. Ryzhii, S. Boubanga Tombet, A. Satou, M. Ryzhii, V.V. Popov, W. Knap, V. Mitin, and M. Shur (Part:Joint Work, "Chapt. 7: "Terahertz wave generation using graphene and compound semiconductor nano-heterostructures," pp. 237-261)
Springer, Switzerland   May 2015   ISBN:978-3-319-18632-0
DOI: 10.1007/978-3-319-18633-7_7
Handbook of Terahertz Technologies: Devices and Applications, edited by Ho-Jin Song and Tadao Nagatsuma
T. Otsuji (Part:Joint Work, "Chapt. 9: Plasma-wave devices for terahertz applications,"pp. 221-275)
Stanford Publishing, Singapore   Apr 2015   ISBN:978-981-4613-08-8
Frontiers of Graphene and Carbon Nanotubes -Devices and Applications, edited by K. Matsumoto
T. Otsuji (Part:Joint Work, "Graphene Terahertz Devices," Part I, Chapt. 8, pp. 105-122)
Springer, Tokyo, Japan   Mar 2015   

Conference Activities & Talks

 
グラフェンを利用したプラズモニックテラヘルツデバイス技術の研究最前線
IEEE Electron Device Society 関西チャプター講演会・DL講演会   3 Oct 2014   
グラフェン・オン・シリコンのテラヘルツデバイス応用
日本学術振興会将来加工技術第136委員会第3回研究会, 麹町, 東京, 18 July 2014. (invited)   18 Jul 2012   
ダイヤモンドライクカーボン薄膜をトップゲート絶縁膜としたグラフェンFET
鷹林将, 楊猛, 小川修一, 高桑雄二, 吹留博一, 末光眞希, 末光哲也, 尾辻泰一
電子情報通信学会総合大会   23 Mar 2012   
Graphene field effect transistor using a novel self-aligned technique for high speed applications
朴 君昊, 鄭 明鎬,全 春日,吹留 博一, 吉田 智弘, 末光 哲也, 尾辻 泰一, 末光 眞希
2012年春季 第59回 応用物理学関係連合講演会   15 Mar 2012   
光学励起グラフェンのテラヘルツ誘導増幅放出
渡辺 隆之,ステファン ボウバンガ トムベット,シルビア チャン,福嶋 哲也,佐藤 昭,ヴィクトール リズィー ,尾辻 泰一
2012年春季 第59回 応用物理学関係連合講演会   15 Mar 2012   

Research Grants & Projects

 
Creation of 2D-Atomically-Thin-Layered Heterojunctions and their Applications to Novel Terahertz Photonic Devices
Grant-in-Aid for Scientific Research
Project Year: Apr 2016 - Mar 2021
半導体二次元プラズモニックブームの発生とそのテラヘルツ応用(挑戦的萌芽研究)
Grant-in-Aid for Scientific Research
Project Year: Apr 2016 - Mar 2021
グラフェンテラヘルツレーザーの創出(特別推進研究)
Grant-in-Aid for Scientific Research
Project Year: Apr 2011 - Mar 2016
JST-CREST 「グラフェン・オン・シリコン・デバイス・プロセス技術の開拓」
JST Basic Research Programs (Core Research for Evolutional Science and Technology :CREST)
Project Year: Oct 2007 - Mar 2014
JST-ANR SICORP, WIreless communication using TeraHertz plasmonic-nano ICT devices
The Other Research Programs
Project Year: May 2010 - Mar 2014

Social Contribution

 
東北大が新技術・超高速の無線通信が可能
[Informant]  宮城放送テレビ  28 Jun 2006
東北大学電気通信研究所の尾辻泰一研究グループは、北海道大学量子集積エレクトロニクス研究センターの佐野栄一研究グループとの共同で、プラズモン共鳴効果を利用した新原理半導体電子デバイスを用いて室温動作テラヘルツ帯電磁波放射に世界で初めて成功し、この成果を6月28日(現地時間6月27日午後2時)に米国ペンシルバニア州で開催されるデバイス研究国際会議(64th Device Research Conference)で発表することになりました。
テラヘルツ波 室温で放射成功 東北大など プラズモン共鳴利用
[Informant]  日刊工業新聞  28 Jun 2006
東北大学電気通信研究所の尾辻泰一教授は,北海道大学量子集積エレクトロニクス研究センターの佐野栄一教授らと共同で,プラズモン共鳴を利用した集積型テラヘルツ光源素子を試作し,室温下でテラヘルツ帯電磁波を放射することに成功した。実用化されれば,長く未踏周波数領域とされてきたテラヘルツ帯を情報通信の中枢として活用することが可能だという。
特集記事「物理に還る」
[Informant]  日経エレクトロニクス  1 Jan 2006
東北大学電気通信研究所教授の尾辻泰一氏は,数THzの電磁場の表面プラズモン共鳴を利用して,光通信で一般的な赤外線を,波長分波器などの素子を使わずに処理する素子を2006年春をメドに開発中である。無線LANや携帯電話で電波をミキサなどの部品で処理するのと同様なことを,THz帯でしかも1チップで実現するもので,大幅な小型化,低消費電力化,超高速伝送などが可能になる。
テラヘルツ波室温でも放射 東北大が新技術
[Informant]  河北新報  28 Jun 2006
テラヘルツ波(テラは一兆)を室温で放射できる半導体素子を、東北大電気通信研究所の尾辻泰一教授(テラヘルツ電子工学)らの研究グループが開発した。電波と光波の間の周波数帯にあるテラヘルツ波は、光ファイバー通信と無線通信の情報を共有しやすく、無線速度が数百倍速くなるなど超高速通信に応用できる可能性があるという。
テラヘルツ電磁波 簡便に放射 無線通信の速度大幅アップに期待
[Informant]  読売新聞 オンライン  28 Jun 2006
無線通信の速度を飛躍的に上げられるなどとして注目されている「テラヘルツ電磁波」を,簡便な方法で放射させることに東北大学電気通信研究所の尾辻泰一教授と北海道大の研究チームが成功した。従来,放射させるために極めて低温での大型の装置が必要だったが,室温・小型で可能となり,普及に向けた大きな一歩となるという。

Others

 
Oct 2007   グラフェン・オン・シリコン材料・デバイス技術の開発
グラフェン・オン・シリコン(GOS)材料・プロセス技術の開発を通して,相補的スイッチングデバイス(CGOS)及びプラズモン共鳴テラヘルツデバイス(PRGOS)技術の開発を行う。これにより,シリコンテクノロジーをベースとしながら,キャリア輸送限界を超えた新しい超高速大規模集積デバイスを実現する。
May 2010   テラヘルツ帯プラズモニック・ナノICTデバイスを利用した無線通信
本研究は、テラヘルツ波を利用した超広帯域ユビキタス無線通信のための革新的なプラズモニックナノデバイス技術の開発を目的とする。
日本側は主にプラズモン共鳴型光源デバイスおよび変調器デバイスについて、フランス側は主にフォトダイオードによる光源デバイスおよび検出器デバイスについて、互いにノウハウを提供し、無線通信実証試験機を開発する。
両国の研究チームが相互補完的に取り組むことで、次世代高精細テレビのデータ非圧縮伝送や遠隔医療操作などにおける大容量無線伝送技術の実用化に貢献することが期待される。
Apr 2004   2次元プラズモン共鳴効果を利用した室温動作高効率テラヘルツ帯フォトミキサーの研究開発
2次元プラズモン共鳴効果を利用した室温動作かつ高効率なテラヘルツ帯フォトミキサーの研究開発を行う