2014年10月
Demonstrating 30-nm spatial resolution of three-multilayer-mirror objective for extreme ultraviolet microscopy: Imaging test by observing lithography mask
APPLIED PHYSICS EXPRESS
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- 巻
- 7
- 号
- 10
- 開始ページ
- 102502-1
- 終了ページ
- 102502-4
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.7567/APEX.7.102502
- 出版者・発行元
- IOP PUBLISHING LTD
To confirm the high spatial resolution expected in extreme ultraviolet (EUV) microscopy, fine grating patterns with a half-pitch of less than 100 nm on a lithography mask were imaged using a full-field microscope based on a multilayer-mirror objective. When the tilted illumination technique is applied to this novel imaging system, a spatial resolution better than 20 nm can be expected at a wavelength of 13.5 nm. We demonstrated high resolution via EUV reflection images of test patterns with a half-pitch between 30 and 80 nm. (C) 2014 The Japan Society of Applied Physics
- リンク情報
- ID情報
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- DOI : 10.7567/APEX.7.102502
- ISSN : 1882-0778
- eISSN : 1882-0786
- Web of Science ID : WOS:000344439300009