Yamauchi, Jun

J-GLOBAL         Last updated: Nov 27, 2019 at 03:05
Yamauchi, Jun
Keio University
Faculty of Science and Technology Department of Physics
Job title
Associate Professor
Ph.D(Sci)(The University of Tokyo)
Research funding number

Research Areas


Academic & Professional Experience

Apr 1994
Mar 2004
Toshiba Coorporate R & D Center
Apr 2004
慶應義塾大学 理工学部 専任講師


Mar 1989
Department of Physics, Faculty of Science, The University of Tokyo

Committee Memberships

May 2010
Apr 2011
日本物理学会  領域運営委員(領域10)
Nov 2006
Oct 2007
日本物理学会  領域9世話人
Nov 2002
Oct 2004
日本物理学会  新著紹介小委員会
May 1999
Apr 2000
日本物理学会  領域4世話人

Published Papers

Matsushima N., Yamauchi J.
Japanese Journal of Applied Physics   58(6) 061005-1-061005-10   May 2019   [Refereed]
© 2019 The Japan Society of Applied Physics. We systematically investigated the formation energies and the core-level X-ray photoelectron spectroscopy binding energy (XPSBE) shifts of nitrogen (N) 1s and phosphorus (P) 2p for defects including N a...
Matsushima N., Yamauchi J.
Japanese Journal of Applied Physics   58(3) 031001-1-031001-10   Mar 2019   [Refereed]
© 2019 The Japan Society of Applied Physics. We systematically investigated the core-level X-ray photoelectron spectroscopy (XPS) binding energy shifts of B 1s and Al 2p and formation energies for defects including boron and aluminum in 3C-silicon...
YAMAUCHI JUN, Yoshimoto Yoshihide, and Suwa Yuji
Journal of Applied Physics   119(17) 175704-1-175704-9   May 2016   [Refereed]
We carried out a comprehensive study on the B 1s core-level X-ray photoelectron spectroscopy (XPS) binding energies and formation energies for boron defects in crystalline silicon by first-principles calculation with careful evaluation of the loca...
First Principles XPS Calculation for the B defects in SiC
Naoki Matsushima and Jun Yamauchi
JPS Conference Proceedings(APPC12)   1 012027-1/4   Mar 2014   [Refereed]
First-principles core-level X-ray photoelectron spectroscopy calculation on arsenic defects in silicon crystal
Hiroki Kishi, Miki Miyazawa, Naoki Matsushima, and Jun Yamauchi
AIP Conference Proceedings(ICDS2014)   1583 226-229   Feb 2014   [Refereed]

Books etc

新訂版 表面科学の基礎と応用
YAMAUCHI JUN (Part:Joint Work, 549-557)
エヌ ティー エス   Jun 2004   ISBN:4-86043-051-4 C3050

Conference Activities & Talks

前田辰郎、張文馨、入沢寿史、石井裕之、服部浩之、内田紀行、山内 淳
第65回応用物理学会春季学術講演会   18 Mar 2018   応用物理学会
First-principles XPS photoelectron spectroscopy analysis of arsenic and phosphorus defects in silicon crylstal
International Conference on Defects in Semiconductors   31 Jul 2017   ICDS committee
Relaxation effect of the core-level X-ray photoelectron spectroscopy for the dopant defects in 3C-silicon carbide: a first-principles study
Naoki Matsushima and (/)-RYAMAUCHI JUN
International Conference on the Physics of Semiconductors   4 Aug 2016   ICPS commitee
Matsushima Naoki,YAMAUCHI JUN
日本物理学会 第70回年次大会   22 Mar 2015   日本物理学会
Relaxation effect of X-ray photoelectron spectroscopy for defects in semiconductors: a first-principles study
YAMAUCHI JUN and Matsushima Naoki
International Symposium on Computics: Quantum Simulation and Design   1 Dec 2014   MEXT Grant-in-Aid Project FY2010-2014 "Material Design through Computics: Complex Correlation and Non-equilibrium Dynamics"

Research Grants & Projects

文部科学省: Grant-in-Aid for Scientific Research
Project Year: Apr 2010 - Mar 2015    Investigator(s): Shinji Tsuneyuki
文部科学省次世代IT基盤構築のための研究開発: 文部科学省次世代IT基盤構築のための研究開発
Project Year: Oct 2008 - Mar 2011
シリコンナノエレクトロニクスの新展開 --ポストスケーリング ナノテクノロジー--
Grant-in-Aid for Scientific Research
Project Year: Aug 2006 - Mar 2010
Grant-in-Aid for Scientific Research
Project Year: Aug 2005 - Mar 2008
キヤノン株: 指定寄付
Project Year: Apr 2005 - Mar 2006