YAMAGUCHI ATSUSHI

J-GLOBAL         Last updated: Dec 26, 2018 at 03:16
 
Avatar
Name
YAMAGUCHI ATSUSHI
Affiliation
Kanazawa Institute of Technology
Section
Kanazawa Institute of Technology College of Engineering Department of Electrical and Electronic Engineering

Research Areas

 
 
  • Physics / Condensed matter physics I / We study on optical properties of GaN-based material and devices. Especially, high-sensitive mapping measurement of residual strain in GaN substrate, and optical polarization propeties in non-c-oriented InGaN quantum wells are deeply investigated now.

Published Papers

 
Theoretical Analysis of Optical Polarization Properties in Semipolar and Nonpolar InGaN Quantum Wells for Precise Determination of Valence-Band Parameters in InGaN Alloy Material
SAKAI SHIGETA, YAMAGUCHI ATSUSHI
Physica Status Solidi B   252(5) 885-889   Mar 2015   [Refereed]
Narrow Emission Spectra and High Optical Output Power from Blue Multi-Quantum Well Structures on M-Plane GaN Substrates
Kaori Kurihara, Satoru Nagao, YAMAGUCHI ATSUSHI
The 6th International Symposium on Growth of III-Nitrides      Nov 2015   [Refereed]
Possible Origin of Double-Peak Emission in InGaN Quantum Wells on m-Plane Free-Standing GaN Substrates
SAKAI SHIGETA, YAMAGUCHI ATSUSHI, Kaori Kurihara, Satoru Nagao
The 6th International Symposium on Growth of III-Nitrides      Nov 2015   [Refereed]
Possible origin of double-peak emission in InGaN quantum wells on m-plane free-standing GaN substrates
SAKAI SHIGETA, YAMAGUCHI ATSUSHI, KURIHARA KAORI, NAGAO SATORU
Jpn. J. Appl. Phys.   55(5) 05FG08-1-05FG08-4   Apr 2016   [Refereed]
Analysis of radiative and non-radiative lifetimes in GaN using accurate inter-nal-quantum-efficiency values estimated by simultaneous photoluminescence and photo-acoustic measurements
KAWAKAMI KOHEI, NAKANO TAKASHI, YAMAGUCHI ATSUSHI
SPIE Photonics West 2016, San Francisco, US   9748-27 1-6   2016   [Refereed]

Misc

 
Enhancement of Optical Gain by Controlling Waveguide Modes in Semipolar InGaN QW Laser Diodes
YAMAGUCHI ATSUSHI
The International Workshop on Nitride Semiconductors 2016 (IWN 2016), Orland, US      Oct 2016

Conference Activities & Talks

 
Narrow Emission Spectra and High Optical Output Power from Blue Multi-Quantum Well Structures on M-Plane GaN Substrates
Kaori Kurihara, Satoru Nagao, YAMAGUCHI ATSUSHI
The 6th International Symposium on Growth of III-Nitrides   Nov 2015   
Possible Origin of Double-Peak Emission in InGaN Quantum Wells on m-Plane Free-Standing GaN Substrates
SAKAI SHIGETA, YAMAGUCHI ATSUSHI, Kaori Kurihara, Satoru Nagao
The 6th International Symposium on Growth of III-Nitrides   Nov 2015   
Estimation of internal quantum efficiency in III-nitride materials using simultaneous photo-acoustic and photoluminescence measurements [Invited]
YAMAGUCHI ATSUSHI, N. Shimizu, S. Sakai, T. Nakano, H. Fukada, Y. Kanitani, S. Tomiya
SPIE Photonics West 2018   2018   
Evaluation of Potential Fluctuation in InGaN Quantum-Well Laser Diodes by Optical-Pump Stimulated-Emission Measurements
OSHIMA ITSUKI, Yuma Ikeda, Shigeta Sakai, YAMAGUCHI ATSUSHI, Yuya Kanitani, S. Tomiya
26th International Semiconductor Laser Conference   2018   
Theoretical and Experimental Studies on Potential Fluctuation in InGaN Quantum-Well Layers
FUJITA TAKASHI, S. Sakai, Y. Ikeda, YAMAGUCHI ATSUSHI, Y. Kanitani, S. Tomiya
26th International Semiconductor Laser Conference   Sep 2018